Porous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical.
|Number of pages||3|
|Journal||Solid State Communications|
|Publication status||Published - Sept 1994|
Scopus Subject Areas
- Condensed Matter Physics
- Materials Chemistry