Wavelength dependence in photosynthesis of porous silicon dot

Kok Wai CHEAH*, C. H. Choy

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

27 Citations (Scopus)


Porous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical.

Original languageEnglish
Pages (from-to)795-797
Number of pages3
JournalSolid State Communications
Issue number10
Publication statusPublished - Sept 1994

Scopus Subject Areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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