TY - JOUR
T1 - Vertical organic permeable dual-base transistors for logic circuits
AU - Guo, Erjuan
AU - Wu, Zhongbin
AU - Darbandy, Ghader
AU - Xing, Shen
AU - Wang, Shu Jen
AU - Tahn, Alexander
AU - Göbel, Michael
AU - Kloes, Alexander
AU - Leo, Karl
AU - Kleemann, Hans
N1 - Funding information:
E.G. and S.X. thank the financial support from China Scholarship Council (No.201706890003 and 201706070125). Z.W. acknowledges the Alexander von Humboldt Foundation. G.D. and A.K. are grateful to the German Research Foundation (DFG) under the grants KL 1042/9-2 (SPP FflexCom). K.L. also gratefully acknowledges the German Research Foundation (DFG) under the grants LE 747/52-2 (SPP FflexCom). We acknowledge Petr Formanek (IPF) for assistance with TEM, and Tseng Hsin for help with dynamic characterization of logic circuits.
Open Access funding provided by Projekt DEAL.
Publisher copyright:
© The Author(s) 2020
PY - 2020/9/18
Y1 - 2020/9/18
N2 - The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.
AB - The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.
UR - http://europepmc.org/abstract/med/32948770
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85091247379&origin=resultslist&sort=plf-f&src=s&sid=6e3d551b2c979918320fbd80a95f6035&sot=b&sdt=b&s=DOI%2810.1038%2Fs41467-020-18576-5%29&sl=31&sessionSearchId=6e3d551b2c979918320fbd80a95f6035
U2 - 10.1038/s41467-020-18576-5
DO - 10.1038/s41467-020-18576-5
M3 - Journal article
C2 - 32948770
SN - 2041-1723
VL - 11
JO - Nature Communications
JF - Nature Communications
M1 - 4725
ER -