Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics

S.-J. Wang*, M. Sawatzki, H. Kleemann, I. Lashkov, D. Wolf, A. Lubk, F. Talnack, S. Mannsfeld, Y. Krupskaya, B. Büchner, K. Leo*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

13 Citations (Scopus)


Rubrene single crystal domains with hundreds of micrometers size fully covering different substrates are achieved by thermal annealing of evaporated amorphous thin films with the help of a thin glassy underlayer. The sufficiently large energy level offset of the underlayer material and rubrene enables high performance staggered bottom gate rubrene crystalline transistors with maximum field-effect linear mobility over 5 cm2V−1s−1Avg = 4.35 ± 0.76 cm2V−1s−1) for short channel devices of 20 μm, comparable to high quality rubrene bulk single crystals. Moreover, since molecular dopants up to several mole percent can be incorporated into the single crystals with a minimal disturbance of the lattice, the contact resistance of the transistors is significantly reduced to around 1 by contact doping via adlayer epitaxy of p-type doped rubrene. Our results pave the way for novel high-performance organic electronics using crystalline active materials with mass-production compatible deposition techniques.

Original languageEnglish
Article number100352
JournalMaterials Today Physics
Early online date5 Feb 2021
Publication statusPublished - Mar 2021

Scopus Subject Areas

  • Materials Science(all)
  • Energy (miscellaneous)
  • Physics and Astronomy (miscellaneous)

User-Defined Keywords

  • Molecular doping
  • Organic electronics
  • Organic field-effect transistor
  • Organic semiconductors
  • Organic single crystal
  • Organic thin-film transistor


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