TY - JOUR
T1 - Vacuum processed large area doped thin-film crystals
T2 - A new approach for high-performance organic electronics
AU - Wang, S.-J.
AU - Sawatzki, M.
AU - Kleemann, H.
AU - Lashkov, I.
AU - Wolf, D.
AU - Lubk, A.
AU - Talnack, F.
AU - Mannsfeld, S.
AU - Krupskaya, Y.
AU - Büchner, B.
AU - Leo, K.
N1 - Funding Information:
We thank Prof. Vitaly Podzorov and Dr. Frank Ortmann for fruitful discussions and Mr. André Hiess and Mr. Felix Winkler for the fabrication of the stencil masks. We acknowledge SOLEIL for provision of synchrotron radiation facilities, and we would like to thank P. Fontaine, A. Hemmerle and N. Aubert for assistance in using beamline SIRIUS. S.-J.W. and Y.K. acknowledge the financial support from the German Research Foundation ( DFG ) through KR 4364/4-1. A.L. and D.W. acknowledge support by the European Research Council ( ERC ) under the Horizon 2020 research and innovation program of the European Union (Grant Agreement No. 715620 ). K.L. acknowledges the funding by DFG project Le747/52.
Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/3
Y1 - 2021/3
N2 - Rubrene single crystal domains with hundreds of micrometers size fully covering different substrates are achieved by thermal annealing of evaporated amorphous thin films with the help of a thin glassy underlayer. The sufficiently large energy level offset of the underlayer material and rubrene enables high performance staggered bottom gate rubrene crystalline transistors with maximum field-effect linear mobility over 5 cm2V−1s−1 (μAvg = 4.35 ± 0.76 cm2V−1s−1) for short channel devices of 20 μm, comparable to high quality rubrene bulk single crystals. Moreover, since molecular dopants up to several mole percent can be incorporated into the single crystals with a minimal disturbance of the lattice, the contact resistance of the transistors is significantly reduced to around 1 kOhm.cm by contact doping via adlayer epitaxy of p-type doped rubrene. Our results pave the way for novel high-performance organic electronics using crystalline active materials with mass-production compatible deposition techniques.
AB - Rubrene single crystal domains with hundreds of micrometers size fully covering different substrates are achieved by thermal annealing of evaporated amorphous thin films with the help of a thin glassy underlayer. The sufficiently large energy level offset of the underlayer material and rubrene enables high performance staggered bottom gate rubrene crystalline transistors with maximum field-effect linear mobility over 5 cm2V−1s−1 (μAvg = 4.35 ± 0.76 cm2V−1s−1) for short channel devices of 20 μm, comparable to high quality rubrene bulk single crystals. Moreover, since molecular dopants up to several mole percent can be incorporated into the single crystals with a minimal disturbance of the lattice, the contact resistance of the transistors is significantly reduced to around 1 kOhm.cm by contact doping via adlayer epitaxy of p-type doped rubrene. Our results pave the way for novel high-performance organic electronics using crystalline active materials with mass-production compatible deposition techniques.
KW - Molecular doping
KW - Organic electronics
KW - Organic field-effect transistor
KW - Organic semiconductors
KW - Organic single crystal
KW - Organic thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=85103099650&partnerID=8YFLogxK
U2 - 10.1016/j.mtphys.2021.100352
DO - 10.1016/j.mtphys.2021.100352
M3 - Journal article
AN - SCOPUS:85103099650
SN - 2542-5293
VL - 17
JO - Materials Today Physics
JF - Materials Today Physics
M1 - 100352
ER -