Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters

Cyrus Y.H. Chan; C. M. Chow; Shu Kong SO

doi:10.1016/j.orgel.2011.04.023

Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters

Cyrus Y.H. Chan, C. M. Chow, Shu Kong SO

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

15 Citations (Scopus)

Abstract

Organic thin-film transistor (OTFT) technique was used to investigate the effects of doping on N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB). Different transition metal oxides (TMOs) including molybdenum oxide (MoO₃), vanadium oxide (V₂O₅), tungsten oxide (WO₃) were employed as dopants. Using temperature dependent OTFT measurement, the carrier mobility and carrier concentration of the doping system can be extracted simultaneously. Generally, all TMOs form p-dopants and the conductivities increase drastically after doping. Among the TMOs, MoO ₃ appears to be the most effective p-type dopant. It generates the largest free carrier concentration (1.4 × 10¹⁷ cm^-3) and has the least activation energy (∼138 meV) for modest doping concentration of ∼5 vol.%. Detailed carrier transport analysis indicates that the carrier mobilities were slightly reduced. It appears that the increase of free carrier concentration is the deciding factor in the conductivity enhancement in TMO-doped NPB.

Original language	English
Pages (from-to)	1454-1458
Number of pages	5
Journal	Organic Electronics
Volume	12
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2011.04.023
Publication status	Published - Aug 2011

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

User-Defined Keywords

Conductivity
Doping
Field-effect transistors
Organic electronics
Transition metal oxides

Access to Document

10.1016/j.orgel.2011.04.023

Cite this

@article{56bc7b4a4d8e434abd9ea945cc51b21f,

title = "Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters",

abstract = "Organic thin-film transistor (OTFT) technique was used to investigate the effects of doping on N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB). Different transition metal oxides (TMOs) including molybdenum oxide (MoO3), vanadium oxide (V2O5), tungsten oxide (WO3) were employed as dopants. Using temperature dependent OTFT measurement, the carrier mobility and carrier concentration of the doping system can be extracted simultaneously. Generally, all TMOs form p-dopants and the conductivities increase drastically after doping. Among the TMOs, MoO 3 appears to be the most effective p-type dopant. It generates the largest free carrier concentration (1.4 × 1017 cm-3) and has the least activation energy (∼138 meV) for modest doping concentration of ∼5 vol.%. Detailed carrier transport analysis indicates that the carrier mobilities were slightly reduced. It appears that the increase of free carrier concentration is the deciding factor in the conductivity enhancement in TMO-doped NPB.",

keywords = "Conductivity, Doping, Field-effect transistors, Organic electronics, Transition metal oxides",

author = "Chan, {Cyrus Y.H.} and Chow, {C. M.} and SO, {Shu Kong}",

note = "Funding Information: Supports of this research by the Research Committee of Hong Kong Baptist University and the Research Grant Council of Hong Kong under grant # HKBU211209E are gratefully acknowledged. Measurements of the GIXRD were supported by an equipment grant from the Research Grant Council of Hong Kong under grant # SEG HKBU06 .",

year = "2011",

month = aug,

doi = "10.1016/j.orgel.2011.04.023",

language = "English",

volume = "12",

pages = "1454--1458",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier BV",

number = "8",

}

TY - JOUR

T1 - Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters

AU - Chan, Cyrus Y.H.

AU - Chow, C. M.

AU - SO, Shu Kong

N1 - Funding Information: Supports of this research by the Research Committee of Hong Kong Baptist University and the Research Grant Council of Hong Kong under grant # HKBU211209E are gratefully acknowledged. Measurements of the GIXRD were supported by an equipment grant from the Research Grant Council of Hong Kong under grant # SEG HKBU06 .

PY - 2011/8

Y1 - 2011/8

N2 - Organic thin-film transistor (OTFT) technique was used to investigate the effects of doping on N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB). Different transition metal oxides (TMOs) including molybdenum oxide (MoO3), vanadium oxide (V2O5), tungsten oxide (WO3) were employed as dopants. Using temperature dependent OTFT measurement, the carrier mobility and carrier concentration of the doping system can be extracted simultaneously. Generally, all TMOs form p-dopants and the conductivities increase drastically after doping. Among the TMOs, MoO 3 appears to be the most effective p-type dopant. It generates the largest free carrier concentration (1.4 × 1017 cm-3) and has the least activation energy (∼138 meV) for modest doping concentration of ∼5 vol.%. Detailed carrier transport analysis indicates that the carrier mobilities were slightly reduced. It appears that the increase of free carrier concentration is the deciding factor in the conductivity enhancement in TMO-doped NPB.

AB - Organic thin-film transistor (OTFT) technique was used to investigate the effects of doping on N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB). Different transition metal oxides (TMOs) including molybdenum oxide (MoO3), vanadium oxide (V2O5), tungsten oxide (WO3) were employed as dopants. Using temperature dependent OTFT measurement, the carrier mobility and carrier concentration of the doping system can be extracted simultaneously. Generally, all TMOs form p-dopants and the conductivities increase drastically after doping. Among the TMOs, MoO 3 appears to be the most effective p-type dopant. It generates the largest free carrier concentration (1.4 × 1017 cm-3) and has the least activation energy (∼138 meV) for modest doping concentration of ∼5 vol.%. Detailed carrier transport analysis indicates that the carrier mobilities were slightly reduced. It appears that the increase of free carrier concentration is the deciding factor in the conductivity enhancement in TMO-doped NPB.

KW - Conductivity

KW - Doping

KW - Field-effect transistors

KW - Organic electronics

KW - Transition metal oxides

UR - http://www.scopus.com/inward/record.url?scp=79958024615&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2011.04.023

DO - 10.1016/j.orgel.2011.04.023

M3 - Journal article

AN - SCOPUS:79958024615

SN - 1566-1199

VL - 12

SP - 1454

EP - 1458

JO - Organic Electronics

JF - Organic Electronics

IS - 8

ER -

Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters

Abstract

Scopus Subject Areas

User-Defined Keywords

Access to Document

Other files and links

Fingerprint

Cite this