Using transistor technique to study the effects of transition metal oxide dopants on organic charge transporters

Cyrus Y.H. Chan, C. M. Chow, Shu Kong SO

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Organic thin-film transistor (OTFT) technique was used to investigate the effects of doping on N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB). Different transition metal oxides (TMOs) including molybdenum oxide (MoO3), vanadium oxide (V2O5), tungsten oxide (WO3) were employed as dopants. Using temperature dependent OTFT measurement, the carrier mobility and carrier concentration of the doping system can be extracted simultaneously. Generally, all TMOs form p-dopants and the conductivities increase drastically after doping. Among the TMOs, MoO 3 appears to be the most effective p-type dopant. It generates the largest free carrier concentration (1.4 × 1017 cm-3) and has the least activation energy (∼138 meV) for modest doping concentration of ∼5 vol.%. Detailed carrier transport analysis indicates that the carrier mobilities were slightly reduced. It appears that the increase of free carrier concentration is the deciding factor in the conductivity enhancement in TMO-doped NPB.

Original languageEnglish
Pages (from-to)1454-1458
Number of pages5
JournalOrganic Electronics
Volume12
Issue number8
DOIs
Publication statusPublished - Aug 2011

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Conductivity
  • Doping
  • Field-effect transistors
  • Organic electronics
  • Transition metal oxides

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