Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator

Yin Xu; Feng Li; Zhe Kang; Xianting Zhang; Dongmei Huang; Hwa-Yaw Tam; Alex Wai

doi:10.23919/PS.2019.8818156

Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator

Yin Xu, Feng Li^*, Zhe Kang, Xianting Zhang, Dongmei Huang, Hwa-Yaw Tam, Alex Wai

^*Corresponding author for this work

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

Abstract

We propose an ultra-high modulation efficiency and polarization-insensitive electro-absorption modulator based on a hybrid cadmium oxide-silicon waveguide. The modulation efficiency of ~8.01 dB/μm is achieved for both polarizations, resulting a short device length (3 μm).

Original language	English
Title of host publication	Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
Publisher	IEEE
Number of pages	3
ISBN (Electronic)	9784885523212
ISBN (Print)	9781538676516
DOIs	https://doi.org/10.23919/PS.2019.8818156
Publication status	Published - Jul 2019
Event	24th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka International Congress Center, Fukuoka, Japan Duration: 7 Jul 2019 → 11 Jul 2019 https://ieeexplore.ieee.org/xpl/conhome/8804302/proceeding

Publication series

Name	International Conference on Photonics in Switching (PS)
Publisher	IEEE

Conference

Conference	24th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing, OECC/PSC 2019
Country/Territory	Japan
City	Fukuoka
Period	7/07/19 → 11/07/19
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8804302/proceeding

User-Defined Keywords

Optical modulators
Novel photonic materials for active devices

Access to Document

10.23919/PS.2019.8818156

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Xu, Y., Li, F., Kang, Z., Zhang, X., Huang, D., Tam, H.-Y., & Wai, A. (2019). Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator. In Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 Article 8818156 (International Conference on Photonics in Switching (PS) ). IEEE. https://doi.org/10.23919/PS.2019.8818156

Xu, Yin ; Li, Feng ; Kang, Zhe et al. / Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator. Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019. IEEE, 2019. (International Conference on Photonics in Switching (PS) ).

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title = "Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator",

abstract = "We propose an ultra-high modulation efficiency and polarization-insensitive electro-absorption modulator based on a hybrid cadmium oxide-silicon waveguide. The modulation efficiency of ~8.01 dB/μm is achieved for both polarizations, resulting a short device length (3 μm).",

keywords = "Optical modulators, Novel photonic materials for active devices",

author = "Yin Xu and Feng Li and Zhe Kang and Xianting Zhang and Dongmei Huang and Hwa-Yaw Tam and Alex Wai",

note = "Funding Information: We acknowledge the support from Shenzhen Science and Technology Innovation (JCYJ20160331141313917), Research Grant Council of Hong Kong (PolyU152173/17E), and the Polytechnic University (1-ZVGB). Publisher Copyright: {\textcopyright} 2019 The Institute of Electronics, Information and Communication Engineers (IEICE).; 24th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing, OECC/PSC 2019 ; Conference date: 07-07-2019 Through 11-07-2019",

year = "2019",

month = jul,

doi = "10.23919/PS.2019.8818156",

language = "English",

isbn = "9781538676516",

series = "International Conference on Photonics in Switching (PS) ",

publisher = "IEEE",

booktitle = "Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019",

address = "United States",

url = "https://ieeexplore.ieee.org/xpl/conhome/8804302/proceeding",

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Xu, Y, Li, F, Kang, Z, Zhang, X, Huang, D, Tam, H-Y & Wai, A 2019, Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator. in Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019., 8818156, International Conference on Photonics in Switching (PS) , IEEE, 24th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing, OECC/PSC 2019, Fukuoka, Japan, 7/07/19. https://doi.org/10.23919/PS.2019.8818156

Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator. / Xu, Yin; Li, Feng; Kang, Zhe et al.
Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019. IEEE, 2019. 8818156 (International Conference on Photonics in Switching (PS) ).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

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T1 - Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator

AU - Xu, Yin

AU - Li, Feng

AU - Kang, Zhe

AU - Zhang, Xianting

AU - Huang, Dongmei

AU - Tam, Hwa-Yaw

AU - Wai, Alex

N1 - Funding Information: We acknowledge the support from Shenzhen Science and Technology Innovation (JCYJ20160331141313917), Research Grant Council of Hong Kong (PolyU152173/17E), and the Polytechnic University (1-ZVGB). Publisher Copyright: © 2019 The Institute of Electronics, Information and Communication Engineers (IEICE).

PY - 2019/7

Y1 - 2019/7

N2 - We propose an ultra-high modulation efficiency and polarization-insensitive electro-absorption modulator based on a hybrid cadmium oxide-silicon waveguide. The modulation efficiency of ~8.01 dB/μm is achieved for both polarizations, resulting a short device length (3 μm).

AB - We propose an ultra-high modulation efficiency and polarization-insensitive electro-absorption modulator based on a hybrid cadmium oxide-silicon waveguide. The modulation efficiency of ~8.01 dB/μm is achieved for both polarizations, resulting a short device length (3 μm).

KW - Optical modulators

KW - Novel photonic materials for active devices

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U2 - 10.23919/PS.2019.8818156

DO - 10.23919/PS.2019.8818156

M3 - Conference proceeding

AN - SCOPUS:85072342698

SN - 9781538676516

T3 - International Conference on Photonics in Switching (PS)

BT - Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019

PB - IEEE

T2 - 24th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing, OECC/PSC 2019

Y2 - 7 July 2019 through 11 July 2019

ER -

Xu Y, Li F, Kang Z, Zhang X, Huang D, Tam HY et al. Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator. In Proceedings of 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019. IEEE. 2019. 8818156. (International Conference on Photonics in Switching (PS) ). doi: 10.23919/PS.2019.8818156

Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator

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