Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices

Yoon Fei Liew; Furong Zhu; Soo Jin Chua; Jian Xin Tang

doi:10.1063/1.1815374

Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices

Yoon Fei Liew
, Furong Zhu^*
, Soo Jin Chua
, Jian Xin Tang

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

33 Citations (Scopus)

Abstract

Tris-(8-hydroxyquinoline)aluminum (Alq ₃), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq ₃, a few nanometers thick. The presence of an Alq ₃ interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs.

Original language	English
Pages (from-to)	4511-4513
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1815374
Publication status	Published - 8 Nov 2004

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title = "Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices",

abstract = "Tris-(8-hydroxyquinoline)aluminum (Alq 3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq 3, a few nanometers thick. The presence of an Alq 3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs.",

author = "Liew, \{Yoon Fei\} and Furong Zhu and Chua, \{Soo Jin\} and Tang, \{Jian Xin\}",

year = "2004",

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doi = "10.1063/1.1815374",

language = "English",

volume = "85",

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TY - JOUR

T1 - Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices

AU - Liew, Yoon Fei

AU - Zhu, Furong

AU - Chua, Soo Jin

AU - Tang, Jian Xin

PY - 2004/11/8

Y1 - 2004/11/8

N2 - Tris-(8-hydroxyquinoline)aluminum (Alq 3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq 3, a few nanometers thick. The presence of an Alq 3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs.

AB - Tris-(8-hydroxyquinoline)aluminum (Alq 3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼ 0.6-1.08 eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq 3, a few nanometers thick. The presence of an Alq 3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs.

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U2 - 10.1063/1.1815374

DO - 10.1063/1.1815374

M3 - Journal article

AN - SCOPUS:10844280950

SN - 0003-6951

VL - 85

SP - 4511

EP - 4513

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices

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