Thin-film transistor as a probe to study carrier transport in amorphous organic semiconductors

Shu K. So; Wing H. Choi; Chi H. Cheung

doi:10.1117/1.3534200

Thin-film transistor as a probe to study carrier transport in amorphous organic semiconductors

Shu K. So^*, Wing H. Choi, Chi H. Cheung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

5 Citations (Scopus)

Abstract

We describe how to use the thin-film transistor (TFT) technique to quantify carrier transport of amorphous organic semiconductors relevant to organic electronic devices. We have chosen several amorphous materials, including arylamine compounds, 4,4'-N,N'-dicarbazole-biphenyl (CBP), and a phosphorescent dye molecule [Ir(ppy)₃] for investigations. Generally, the field effect (FE) mobility was found to be about one order of magnitude smaller than that obtained from an independent time-of-flight (TOF) technique. For N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) and N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-TPD), the FE mobilities were found to be 1.7×10^-5 and 1.3 ×10 ^-5cm²/Vs, respectively. Temperature-dependent measurements were carried out to study the FE mobility. It was found that the energetic disorder increased in the neighborhood of a gate dielectric layer. This factor is one of the origins causing the discrepancy between TFT and TOF mobilities. We also examined how the hole transport of CBP is affected by Ir(ppy)₃ when it is doped into CBP.

Original language	English
Article number	011011
Journal	Journal of Photonics for Energy
Volume	1
Issue number	1
DOIs	https://doi.org/10.1117/1.3534200
Publication status	Published - 2011

Scopus Subject Areas

Atomic and Molecular Physics, and Optics
Renewable Energy, Sustainability and the Environment

User-Defined Keywords

Hole transports, 4,4'-N,N'-dicarbazole-biphenyl (CBP)
Organic light-emitting diodes (OLEDs)
Thin-film transistors
Tris(2-phenylpyridine) iridum [Ir(ppy)]

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/1.3534200

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title = "Thin-film transistor as a probe to study carrier transport in amorphous organic semiconductors",

abstract = "We describe how to use the thin-film transistor (TFT) technique to quantify carrier transport of amorphous organic semiconductors relevant to organic electronic devices. We have chosen several amorphous materials, including arylamine compounds, 4,4'-N,N'-dicarbazole-biphenyl (CBP), and a phosphorescent dye molecule [Ir(ppy)3] for investigations. Generally, the field effect (FE) mobility was found to be about one order of magnitude smaller than that obtained from an independent time-of-flight (TOF) technique. For N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) and N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-TPD), the FE mobilities were found to be 1.7×10-5 and 1.3 ×10 -5cm2/Vs, respectively. Temperature-dependent measurements were carried out to study the FE mobility. It was found that the energetic disorder increased in the neighborhood of a gate dielectric layer. This factor is one of the origins causing the discrepancy between TFT and TOF mobilities. We also examined how the hole transport of CBP is affected by Ir(ppy)3 when it is doped into CBP.",

keywords = "Hole transports, 4,4'-N,N'-dicarbazole-biphenyl (CBP), Organic light-emitting diodes (OLEDs), Thin-film transistors, Tris(2-phenylpyridine) iridum [Ir(ppy)]",

author = "So, {Shu K.} and Choi, {Wing H.} and Cheung, {Chi H.}",

note = "Funding Information: Support of this research by the Research Committee of Hong Kong Baptist University and the Research Grant Council of Hong Kong under Grant No. FRG2/09–10/077 and HKBU211209E are gratefully acknowledged.",

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AU - So, Shu K.

AU - Choi, Wing H.

AU - Cheung, Chi H.

N1 - Funding Information: Support of this research by the Research Committee of Hong Kong Baptist University and the Research Grant Council of Hong Kong under Grant No. FRG2/09–10/077 and HKBU211209E are gratefully acknowledged.

PY - 2011

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N2 - We describe how to use the thin-film transistor (TFT) technique to quantify carrier transport of amorphous organic semiconductors relevant to organic electronic devices. We have chosen several amorphous materials, including arylamine compounds, 4,4'-N,N'-dicarbazole-biphenyl (CBP), and a phosphorescent dye molecule [Ir(ppy)3] for investigations. Generally, the field effect (FE) mobility was found to be about one order of magnitude smaller than that obtained from an independent time-of-flight (TOF) technique. For N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) and N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-TPD), the FE mobilities were found to be 1.7×10-5 and 1.3 ×10 -5cm2/Vs, respectively. Temperature-dependent measurements were carried out to study the FE mobility. It was found that the energetic disorder increased in the neighborhood of a gate dielectric layer. This factor is one of the origins causing the discrepancy between TFT and TOF mobilities. We also examined how the hole transport of CBP is affected by Ir(ppy)3 when it is doped into CBP.

AB - We describe how to use the thin-film transistor (TFT) technique to quantify carrier transport of amorphous organic semiconductors relevant to organic electronic devices. We have chosen several amorphous materials, including arylamine compounds, 4,4'-N,N'-dicarbazole-biphenyl (CBP), and a phosphorescent dye molecule [Ir(ppy)3] for investigations. Generally, the field effect (FE) mobility was found to be about one order of magnitude smaller than that obtained from an independent time-of-flight (TOF) technique. For N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) and N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-TPD), the FE mobilities were found to be 1.7×10-5 and 1.3 ×10 -5cm2/Vs, respectively. Temperature-dependent measurements were carried out to study the FE mobility. It was found that the energetic disorder increased in the neighborhood of a gate dielectric layer. This factor is one of the origins causing the discrepancy between TFT and TOF mobilities. We also examined how the hole transport of CBP is affected by Ir(ppy)3 when it is doped into CBP.

KW - Hole transports, 4,4'-N,N'-dicarbazole-biphenyl (CBP)

KW - Organic light-emitting diodes (OLEDs)

KW - Thin-film transistors

KW - Tris(2-phenylpyridine) iridum [Ir(ppy)]

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Thin-film transistor as a probe to study carrier transport in amorphous organic semiconductors

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