Thermal-aware IR drop analysis in large power grid

Research output: Chapter in book/report/conference proceedingConference proceedingpeer-review

25 Citations (Scopus)

Abstract

Due to the positive feedback loop between power grid Joule heating and the linear temperature dependence of resistivity, non-uniform temperature profiles on the power grid in high-performance IC influence the IR drop in the power grid. Lack of accurate evaluation of thermal effect on the IR drop in the power grid may lead to over-design; or worse, underestimates the IR drop due to increased local temperature. This paper presents a method to compute the temperature-dependent IR drop on the power grid extremely fast. We propose a novel thermal model and a mathematical formulation to compute the temperature profiles on the power grid efficiently. Compared to the traditional thermal lumped model, which gives a much larger thermal network than the original power grid (20 times more nodes), our model takes advantage of power grid properties, and reduces the size of the thermal equivalent network dramatically (only 13% of the size of the power grid). Iterative methods [16] are used to efficiently update the IR drops based on the new temperature profile. Experimental results show that without considering temperature impact, the worst IR drop analysis can have error up to 10%.

Original languageEnglish
Title of host publicationProceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
PublisherIEEE
Pages194-199
Number of pages6
ISBN (Print)9780769531175, 0769531172
DOIs
Publication statusPublished - 18 Mar 2008
Event9th International Symposium on Quality Electronic Design, ISQED 2008 - San Jose, United States
Duration: 17 Mar 200819 Mar 2008
https://www.isqed.org/English/Archives/2008/index.html (Conference website)
https://www.isqed.org/English/Archives/2008/ISQED08_Program_v3.pdf (Conference programme)
https://ieeexplore.ieee.org/xpl/conhome/4479672/proceeding (Conference proceedings)

Publication series

NameProceedings of The International Symposium on Quality Electronic Design, ISQED
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Symposium

Symposium9th International Symposium on Quality Electronic Design, ISQED 2008
Country/TerritoryUnited States
CitySan Jose
Period17/03/0819/03/08
Internet address

Scopus Subject Areas

  • Electrical and Electronic Engineering

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