The magnetic mechanism of Zn0.93Co0.07O thin films

Xiaojuan Ye; Denglu Hou; Wei Zhong; Chak Tong AU; Youwei Du

doi:10.1007/s11433-009-0010-8

The magnetic mechanism of Zn_0.93Co_0.07O thin films

Xiaojuan Ye, Denglu Hou, Wei Zhong^*, Chak Tong AU, Youwei Du

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Zn_0.93Co_0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.

Original language	English
Pages (from-to)	21-25
Number of pages	5
Journal	Science China: Physics, Mechanics and Astronomy
Volume	52
Issue number	1
DOIs	https://doi.org/10.1007/s11433-009-0010-8
Publication status	Published - Jan 2009

Scopus Subject Areas

Physics and Astronomy(all)

User-Defined Keywords

Ferromagnetism
Thin film
ZnO-based diluted magnetic semiconductor

Access to Document

10.1007/s11433-009-0010-8

Cite this

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title = "The magnetic mechanism of Zn0.93Co0.07O thin films",

abstract = "Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.",

keywords = "Ferromagnetism, Thin film, ZnO-based diluted magnetic semiconductor",

author = "Xiaojuan Ye and Denglu Hou and Wei Zhong and AU, {Chak Tong} and Youwei Du",

note = "Funding Information: Received June 2, 2008; accepted July 21, 2008 doi: 10.1007/s11433-009-0010-8 †Corresponding author (email: wzhong@mail.nju.edu.cn) Supported by the National Natural Science Foundation of China (Grant No. 10674059) and the Major Project of National Basic Research Program of China (Grant No. 2005CB623605)",

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AU - Hou, Denglu

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AU - AU, Chak Tong

AU - Du, Youwei

N1 - Funding Information: Received June 2, 2008; accepted July 21, 2008 doi: 10.1007/s11433-009-0010-8 †Corresponding author (email: wzhong@mail.nju.edu.cn) Supported by the National Natural Science Foundation of China (Grant No. 10674059) and the Major Project of National Basic Research Program of China (Grant No. 2005CB623605)

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AB - Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.

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