TY - JOUR
T1 - The magnetic mechanism of Zn0.93Co0.07O thin films
AU - Ye, Xiaojuan
AU - Hou, Denglu
AU - Zhong, Wei
AU - Au, Chaktong
AU - Du, Youwei
N1 - Funding Information:
Received June 2, 2008; accepted July 21, 2008 doi: 10.1007/s11433-009-0010-8 †Corresponding author (email: [email protected]) Supported by the National Natural Science Foundation of China (Grant No. 10674059) and the Major Project of National Basic Research Program of China (Grant No. 2005CB623605)
PY - 2009/1
Y1 - 2009/1
N2 - Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.
AB - Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.
KW - Ferromagnetism
KW - Thin film
KW - ZnO-based diluted magnetic semiconductor
UR - http://www.scopus.com/inward/record.url?scp=58149505826&partnerID=8YFLogxK
U2 - 10.1007/s11433-009-0010-8
DO - 10.1007/s11433-009-0010-8
M3 - Journal article
AN - SCOPUS:58149505826
SN - 1672-1799
VL - 52
SP - 21
EP - 25
JO - Science China: Physics, Mechanics and Astronomy
JF - Science China: Physics, Mechanics and Astronomy
IS - 1
ER -