The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

X. Y. Chen; A. M.C. Ng; F. Fang; A. B. Djurišić; W. K. Chan; Hoi Lam TAM; Kok Wai CHEAH; P. W.K. Fong; H. F. Lui; C. Surya

doi:10.1149/1.3282743

The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

X. Y. Chen
, A. M.C. Ng
, F. Fang
, A. B. Djurišić
, W. K. Chan
, Hoi Lam TAM
, Kok Wai CHEAH
, P. W.K. Fong
, H. F. Lui
, C. Surya

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

34 Citations (Scopus)

Abstract

We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

Original language	English
Pages (from-to)	H308-H311
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	3
DOIs	https://doi.org/10.1149/1.3282743
Publication status	Published - 2010

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SDG 7 Affordable and Clean Energy

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10.1149/1.3282743

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@article{715b40540c01474e9e5fcee20609183a,

title = "The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs",

abstract = "We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.",

author = "Chen, \{X. Y.\} and Ng, \{A. M.C.\} and F. Fang and Djuri{\v s}i{\'c}, \{A. B.\} and Chan, \{W. K.\} and TAM, \{Hoi Lam\} and CHEAH, \{Kok Wai\} and Fong, \{P. W.K.\} and Lui, \{H. F.\} and C. Surya",

year = "2010",

doi = "10.1149/1.3282743",

language = "English",

volume = "157",

pages = "H308--H311",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "3",

}

TY - JOUR

T1 - The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

AU - Chen, X. Y.

AU - Ng, A. M.C.

AU - Fang, F.

AU - Djurišić, A. B.

AU - Chan, W. K.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

AU - Fong, P. W.K.

AU - Lui, H. F.

AU - Surya, C.

PY - 2010

Y1 - 2010

N2 - We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

AB - We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

UR - https://www.scopus.com/pages/publications/76349103077

U2 - 10.1149/1.3282743

DO - 10.1149/1.3282743

M3 - Journal article

AN - SCOPUS:76349103077

SN - 0013-4651

VL - 157

SP - H308-H311

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

Abstract

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