The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

X. Y. Chen; A. M.C. Ng; F. Fang; A. B. Djurišić; W. K. Chan; Hoi Lam TAM; Kok Wai CHEAH; P. W.K. Fong; H. F. Lui; C. Surya

doi:10.1149/1.3282743

The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

X. Y. Chen, A. M.C. Ng, F. Fang, A. B. Djurišić, W. K. Chan, Hoi Lam TAM, Kok Wai CHEAH, P. W.K. Fong, H. F. Lui, C. Surya

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

33 Citations (Scopus)

Abstract

We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

Original language	English
Pages (from-to)	H308-H311
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	3
DOIs	https://doi.org/10.1149/1.3282743
Publication status	Published - 2010

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs",

abstract = "We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.",

author = "Chen, {X. Y.} and Ng, {A. M.C.} and F. Fang and Djuri{\v s}i{\'c}, {A. B.} and Chan, {W. K.} and TAM, {Hoi Lam} and CHEAH, {Kok Wai} and Fong, {P. W.K.} and Lui, {H. F.} and C. Surya",

year = "2010",

doi = "10.1149/1.3282743",

language = "English",

volume = "157",

pages = "H308--H311",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

AU - Chen, X. Y.

AU - Ng, A. M.C.

AU - Fang, F.

AU - Djurišić, A. B.

AU - Chan, W. K.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

AU - Fong, P. W.K.

AU - Lui, H. F.

AU - Surya, C.

PY - 2010

Y1 - 2010

N2 - We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

AB - We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

UR - http://www.scopus.com/inward/record.url?scp=76349103077&partnerID=8YFLogxK

U2 - 10.1149/1.3282743

DO - 10.1149/1.3282743

M3 - Journal article

AN - SCOPUS:76349103077

SN - 0013-4651

VL - 157

SP - H308-H311

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

Abstract

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