The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films

L. Ding; T. P. Chen; Y. Liu; M. Yang; J. I. Wong; K. Y. Liu; Furong Zhu; S. Fung

doi:10.1088/0957-4484/18/45/455306

The influence of the implantation dose and energy on the electroluminescence of Si⁺-implanted amorphous SiO₂ thin films

L. Ding^*, T. P. Chen, Y. Liu^*, M. Yang, J. I. Wong, K. Y. Liu, Furong Zhu, S. Fung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

20 Citations (Scopus)

Abstract

Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.

Original language	English
Article number	455306
Journal	Nanotechnology
Volume	18
Issue number	45
Early online date	10 Oct 2007
DOIs	https://doi.org/10.1088/0957-4484/18/45/455306
Publication status	Published - 14 Nov 2007

Scopus Subject Areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films",

abstract = "Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.",

author = "L. Ding and Chen, {T. P.} and Y. Liu and M. Yang and Wong, {J. I.} and Liu, {K. Y.} and Furong Zhu and S. Fung",

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TY - JOUR

T1 - The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films

AU - Ding, L.

AU - Chen, T. P.

AU - Liu, Y.

AU - Yang, M.

AU - Wong, J. I.

AU - Liu, K. Y.

AU - Zhu, Furong

AU - Fung, S.

PY - 2007/11/14

Y1 - 2007/11/14

N2 - Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.

AB - Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.

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DO - 10.1088/0957-4484/18/45/455306

M3 - Journal article

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SN - 0957-4484

VL - 18

JO - Nanotechnology

JF - Nanotechnology

IS - 45

M1 - 455306

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The influence of the implantation dose and energy on the electroluminescence of Si⁺-implanted amorphous SiO₂ thin films

Abstract

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