The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films

L. Ding*, T. P. Chen, Y. Liu*, M. Yang, J. I. Wong, K. Y. Liu, Furong Zhu, S. Fung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ∼460, ∼600, ∼740, and ∼1260∼nm, respectively, among which the ∼600∼nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.

Original languageEnglish
Article number455306
JournalNanotechnology
Volume18
Issue number45
Early online date10 Oct 2007
DOIs
Publication statusPublished - 14 Nov 2007

Scopus Subject Areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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