The influence of the distribution of potential fluctuations on the distribution of states in amorphous semiconductors

Stephen K. O'Leary*, P. K. Lim

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

9 Citations (Scopus)

Abstract

Using a simplified but representative model for the physical structure of an amorphous semiconductor, we examine the corresponding distribution of potential fluctuations. We demonstrate that substantial deviations from a Gaussian distribution of potential fluctuations occur for reasonable parameter selections. We then use a semiclassical approach to study how the distribution of states is shaped by this distribution of potential fluctuations. We find that while the distribution of tail states is relatively heavily influenced by the distribution of potential fluctuations, the distribution of band states is not.
Original languageEnglish
Pages (from-to)513-517
Number of pages5
JournalSolid State Communications
Volume101
Issue number7
DOIs
Publication statusPublished - Feb 1997
Externally publishedYes

Scopus Subject Areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

User-Defined Keywords

  • A. Disordered systems
  • A. Semiconductors
  • D. Electronic states
  • D. Order-disorder effects

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