The formation of a charge layer at the interface of GaMnAs and an organic material

Wenjin Chen; Baikui Li; Hongtao He; Jiannong Wang; Hoi Lam TAM; Kok Wai CHEAH; Xiancun Cao; Yuqi Wang; Guijun Lian; Guangcheng Xiong

doi:10.1209/0295-5075/88/46002

The formation of a charge layer at the interface of GaMnAs and an organic material

Wenjin Chen^*, Baikui Li, Hongtao He, Jiannong Wang, Hoi Lam TAM, Kok Wai CHEAH, Xiancun Cao, Yuqi Wang, Guijun Lian, Guangcheng Xiong

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

1 Citation (Scopus)

Abstract

The interface formed between the ferromagnetic semiconductor GaMnAs and the organic semiconductor N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'- diamine (NPB) was investigated using current transport measurement and ultraviolet photoemission spectroscopy (UPS). The hole injection barrier at a GaMnAs and NPB interface was measured as 0.77eV by modelling the measured current density-voltage (J-V) characteristics in a GaMnAs/NPB/Al structured device. The vacuum level shift at a GaMnAs/NPB interface was deduced to be 0.54 eV, indicating that a dipole layer exists at the interface. A UPS study gave a vacuum level shift of 0.53 eV and a band offset between the GaMnAs valence band and the highest occupied molecular orbital of NPB of 0.79 eV, in good agreement with the results of J-V measurements. We attribute the vacuum level shift to charge transfer across the interface.

Original language	English
Article number	46002
Journal	Europhysics Letters
Volume	88
Issue number	4
DOIs	https://doi.org/10.1209/0295-5075/88/46002
Publication status	Published - Nov 2009

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Physics and Astronomy(all)

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@article{c14e654d1f5b487592f2186aeddc28f0,

title = "The formation of a charge layer at the interface of GaMnAs and an organic material",

abstract = "The interface formed between the ferromagnetic semiconductor GaMnAs and the organic semiconductor N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'- diamine (NPB) was investigated using current transport measurement and ultraviolet photoemission spectroscopy (UPS). The hole injection barrier at a GaMnAs and NPB interface was measured as 0.77eV by modelling the measured current density-voltage (J-V) characteristics in a GaMnAs/NPB/Al structured device. The vacuum level shift at a GaMnAs/NPB interface was deduced to be 0.54 eV, indicating that a dipole layer exists at the interface. A UPS study gave a vacuum level shift of 0.53 eV and a band offset between the GaMnAs valence band and the highest occupied molecular orbital of NPB of 0.79 eV, in good agreement with the results of J-V measurements. We attribute the vacuum level shift to charge transfer across the interface.",

author = "Wenjin Chen and Baikui Li and Hongtao He and Jiannong Wang and TAM, {Hoi Lam} and CHEAH, {Kok Wai} and Xiancun Cao and Yuqi Wang and Guijun Lian and Guangcheng Xiong",

year = "2009",

month = nov,

doi = "10.1209/0295-5075/88/46002",

language = "English",

volume = "88",

journal = "Europhysics Letters",

issn = "0295-5075",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - The formation of a charge layer at the interface of GaMnAs and an organic material

AU - Chen, Wenjin

AU - Li, Baikui

AU - He, Hongtao

AU - Wang, Jiannong

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

AU - Cao, Xiancun

AU - Wang, Yuqi

AU - Lian, Guijun

AU - Xiong, Guangcheng

PY - 2009/11

Y1 - 2009/11

N2 - The interface formed between the ferromagnetic semiconductor GaMnAs and the organic semiconductor N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'- diamine (NPB) was investigated using current transport measurement and ultraviolet photoemission spectroscopy (UPS). The hole injection barrier at a GaMnAs and NPB interface was measured as 0.77eV by modelling the measured current density-voltage (J-V) characteristics in a GaMnAs/NPB/Al structured device. The vacuum level shift at a GaMnAs/NPB interface was deduced to be 0.54 eV, indicating that a dipole layer exists at the interface. A UPS study gave a vacuum level shift of 0.53 eV and a band offset between the GaMnAs valence band and the highest occupied molecular orbital of NPB of 0.79 eV, in good agreement with the results of J-V measurements. We attribute the vacuum level shift to charge transfer across the interface.

AB - The interface formed between the ferromagnetic semiconductor GaMnAs and the organic semiconductor N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'- diamine (NPB) was investigated using current transport measurement and ultraviolet photoemission spectroscopy (UPS). The hole injection barrier at a GaMnAs and NPB interface was measured as 0.77eV by modelling the measured current density-voltage (J-V) characteristics in a GaMnAs/NPB/Al structured device. The vacuum level shift at a GaMnAs/NPB interface was deduced to be 0.54 eV, indicating that a dipole layer exists at the interface. A UPS study gave a vacuum level shift of 0.53 eV and a band offset between the GaMnAs valence band and the highest occupied molecular orbital of NPB of 0.79 eV, in good agreement with the results of J-V measurements. We attribute the vacuum level shift to charge transfer across the interface.

UR - http://www.scopus.com/inward/record.url?scp=78649300233&partnerID=8YFLogxK

U2 - 10.1209/0295-5075/88/46002

DO - 10.1209/0295-5075/88/46002

M3 - Journal article

AN - SCOPUS:78649300233

SN - 0295-5075

VL - 88

JO - Europhysics Letters

JF - Europhysics Letters

IS - 4

M1 - 46002

ER -

The formation of a charge layer at the interface of GaMnAs and an organic material

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