The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Bernard L. Weiss; Y. Chan; W. C. Shiu; E. Herbert Li

doi:10.1063/1.1285840

The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Bernard L. Weiss^*, Y. Chan, W. C. Shiu, E. Herbert Li

^*Corresponding author for this work

Department of Mathematics

Research output: Contribution to journal › Journal article › peer-review

9 Citations (Scopus)

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Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.

Original language	English
Pages (from-to)	3418-3425
Number of pages	8
Journal	Journal of Applied Physics
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.1285840
Publication status	Published - Sept 2000

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title = "The electro-optic properties of interdiffused InGaAs/Inp quantum well structures",

abstract = "We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.",

author = "Weiss, {Bernard L.} and Y. Chan and Shiu, {W. C.} and Li, {E. Herbert}",

note = "This work is supported by the Research Grant Council earmarked grant of Hong Kong and the CRCG research grant of the University of Hong Kong. ",

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AU - Weiss, Bernard L.

AU - Chan, Y.

AU - Shiu, W. C.

AU - Li, E. Herbert

N1 - This work is supported by the Research Grant Council earmarked grant of Hong Kong and the CRCG research grant of the University of Hong Kong.

PY - 2000/9

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N2 - We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.

AB - We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.

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The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

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