The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Bernard L. Weiss; Y. Chan; Wai Chee SHIU; E. Herbert Li

doi:10.1063/1.1285840

The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Bernard L. Weiss^*, Y. Chan, Wai Chee SHIU, E. Herbert Li

^*Corresponding author for this work

Department of Mathematics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

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Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

Original language	English
Pages (from-to)	3418-3425
Number of pages	8
Journal	Journal of Applied Physics
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.1285840
Publication status	Published - Sept 2000

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Physics and Astronomy(all)

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abstract = "We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.",

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AU - Li, E. Herbert

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AB - We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

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The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

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