We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.
Scopus Subject Areas
- Physics and Astronomy(all)