The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Bernard L. Weiss*, Y. Chan, W. C. Shiu, E. Herbert Li

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

8 Citations (Scopus)
23 Downloads (Pure)

Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bernard L. Weiss, Y. Chan, W. C. Shiu, E. Herbert Li; The electro-optic properties of interdiffused InGaAs/InP quantum well structures. J. Appl. Phys. 15 September 2000; 88 (6): 3418–3425. https://doi.org/10.1063/1.1285840 and may be found at https://pubs.aip.org/aip/jap/article/88/6/3418/290917/The-electro-optic-properties-of-interdiffused.

Original languageEnglish
Pages (from-to)3418-3425
Number of pages8
JournalJournal of Applied Physics
Volume88
Issue number6
DOIs
Publication statusPublished - Sept 2000

Scopus Subject Areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'The electro-optic properties of interdiffused InGaAs/Inp quantum well structures'. Together they form a unique fingerprint.

Cite this