The effect of dielectric constant on device mobilities of high-performance, flexible organic field effect transistors

H. S. Tan, N. Mathews*, T. Cahyadi, F. R. Zhu, S. G. Mhaisalkar*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

90 Citations (Scopus)

Abstract

High-performance pentacene (μsat =6.3 cm2 /V s) and poly(3-hexylthiophene) (μsat =0.43 cm2 /V s) field effect transistors have been realized on flexible substrate with low operating voltage (<-5 V), utilizing a trilayer sol-gel silica gate dielectric. Furthermore, the permittivity of the dielectric was tuned from ∼7 to ∼10 by varying plasma treatments, allowing the study of charge carrier mobility variation with k. A 65% reduction in the saturation mobility of the devices was observed when k increases, suggesting that the energetic disorder at the interface between the active layer and the dielectric can be modulated by the high polarizability of the bulk dielectric.

Original languageEnglish
Article number263303
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number26
DOIs
Publication statusPublished - 29 Jun 2009

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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