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Temperature effect on porous silicon luminescence
J. B. Xia, K. W. Cheah
*
*
Corresponding author for this work
Department of Physics
Research output
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Contribution to journal
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Journal article
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peer-review
13
Citations (Scopus)
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Keyphrases
Photoluminescence Intensity
100%
Temperature Effect
100%
Luminescence
100%
Porous Silicon
100%
Spherical Structure
57%
Pillar Structure
57%
Doping Concentration
42%
Low Temperature
28%
High Temperature
28%
Photoluminescence Spectra
28%
Strength of Excitation
28%
Surface States
14%
State Model
14%
Peak Structure
14%
Si Microstructure
14%
Temperature Rise
14%
Engineering
Low-Temperature
100%
Porous Silicon
100%
Experimental Result
50%
Broad Peak
50%
Surface State
50%
State Model
50%
Temperature Increase
50%
Material Science
Luminescence
100%
Photoluminescence
100%
Porous Silicon
100%
Surface (Surface Science)
11%