Temperature effect on porous silicon luminescence

J. B. Xia, Kok Wai CHEAH*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A theoretical surface-state model of porousilicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperatures. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.

Original languageEnglish
Pages (from-to)227-231
Number of pages5
JournalApplied Physics A: Solids and Surfaces
Volume59
Issue number3
DOIs
Publication statusPublished - Sep 1994

Scopus Subject Areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

User-Defined Keywords

  • 73.20.Dx
  • 78.55.Hx

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