Synthesis of gallium nitride film and gallium oxide nano-ribbons by plasma immersion ion implantation of nitrogen into gallium arsenide

K. C. Lo, H. P. Ho, P. K. Chu, Kok Wai CHEAH

Research output: Chapter in book/report/conference proceedingConference contributionpeer-review

Abstract

The preparation of gallium nitride (GaN) and gallium oxide (Ga2O3) nano-ribbons were accomplished by plasma immersion ion implantation (PIII) of nitrogen into GaAs. After PIII of nitrogen, rapid thermal annealing (RTA) was conducted on the sample. For samples annealed at 850°C for 2 minutes we observed the formation of GaN on the GaAs surface. Raman spectrum revealed a peak at 575 cm-1, which was attributed to be a blue-shifted peak (from 568 cm-1) associated with compressively strained GaN. X-ray diffraction and transmission electron microscopy (TEM) imaging were also conducted. They showed that the thickness of the region containing GaN was about 40 nm. When RTA was performed at 950°C for 2 minutes, Ga2O3 nano-ribbon was found on the GaAs sample surface. The ribbons were 0.1 to 2 μm in width, several tens of nanometers in thickness and several tens of micrometers in length. Raman spectroscopy confirmed that the ribbons are single crystalline Ga2O3. In addition, the Ga2O3 ribbons were found to possess strong visible photoluminescence.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages132-136
Number of pages5
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 12 Sep 200314 Sep 2003

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Conference

Conference6th Chinese Optoelectronics Symposium, COES 2003
Country/TerritoryChina
CityHong Kong
Period12/09/0314/09/03

Scopus Subject Areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

User-Defined Keywords

  • Electrons
  • Gallium arsenide
  • Gallium nitride
  • III-V semiconductor materials
  • Nitrogen
  • Plasma immersion ion implantation
  • Rapid thermal annealing
  • Thermal conductivity
  • X-ray diffraction
  • X-ray imaging

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