Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

H. P. Ho*, K. C. Lo, K. Y. Fu, P. K. Chu, K. F. Li, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

17 Citations (Scopus)

Abstract

We report the synthesis of β-phase Ga2O3 nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950°C for 2 min produced clusters of single crystalline β-Ga 2O3 nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga2O3 grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour-liquid-solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.

Original languageEnglish
Pages (from-to)573-577
Number of pages5
JournalChemical Physics Letters
Volume382
Issue number5-6
DOIs
Publication statusPublished - 15 Dec 2003

Scopus Subject Areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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