Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

H. P. Ho; K. C. Lo; K. Y. Fu; P. K. Chu; K. F. Li; Kok Wai CHEAH

doi:10.1016/j.cplett.2003.10.114

Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

H. P. Ho^*, K. C. Lo, K. Y. Fu, P. K. Chu, K. F. Li, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

17 Citations (Scopus)

Abstract

We report the synthesis of β-phase Ga₂O₃ nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950°C for 2 min produced clusters of single crystalline β-Ga ₂O₃ nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga₂O₃ grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour-liquid-solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.

Original language	English
Pages (from-to)	573-577
Number of pages	5
Journal	Chemical Physics Letters
Volume	382
Issue number	5-6
DOIs	https://doi.org/10.1016/j.cplett.2003.10.114
Publication status	Published - 15 Dec 2003

Scopus Subject Areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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@article{4055ac592fd44dbd8d4c5bb165ff412c,

title = "Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing",

abstract = "We report the synthesis of β-phase Ga2O3 nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950°C for 2 min produced clusters of single crystalline β-Ga 2O3 nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga2O3 grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour-liquid-solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.",

author = "Ho, {H. P.} and Lo, {K. C.} and Fu, {K. Y.} and Chu, {P. K.} and Li, {K. F.} and CHEAH, {Kok Wai}",

note = "Funding Information: The authors wish to acknowledge the support from a RGC CERG City U grant (project # 1052/02E) and the technical support from the Solid State Lab. at the CUHK. The research Studentship for K.C. Lo is also acknowledged.",

year = "2003",

month = dec,

day = "15",

doi = "10.1016/j.cplett.2003.10.114",

language = "English",

volume = "382",

pages = "573--577",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

number = "5-6",

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TY - JOUR

T1 - Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

AU - Ho, H. P.

AU - Lo, K. C.

AU - Fu, K. Y.

AU - Chu, P. K.

AU - Li, K. F.

AU - CHEAH, Kok Wai

N1 - Funding Information: The authors wish to acknowledge the support from a RGC CERG City U grant (project # 1052/02E) and the technical support from the Solid State Lab. at the CUHK. The research Studentship for K.C. Lo is also acknowledged.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - We report the synthesis of β-phase Ga2O3 nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950°C for 2 min produced clusters of single crystalline β-Ga 2O3 nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga2O3 grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour-liquid-solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.

AB - We report the synthesis of β-phase Ga2O3 nano-ribbons by plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Un-doped GaAs substrate was treated with PIII of nitrogen. RTA at 950°C for 2 min produced clusters of single crystalline β-Ga 2O3 nano-ribbons. These nano-ribbons have thickness of around 30 nm and widths 60 nm to 2 μm. The nano-ribbons start off directly from Ga2O3 grains on the surface and they emit blue light. Nano-wire growth usually involves a vapour-liquid-solid process in which metallic particles act as a condensation catalyst. However, we believe that the present case is likely to involve a vapour-solid mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0345377691&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2003.10.114

DO - 10.1016/j.cplett.2003.10.114

M3 - Journal article

AN - SCOPUS:0345377691

SN - 0009-2614

VL - 382

SP - 573

EP - 577

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 5-6

ER -

Synthesis of beta gallium oxide nano-ribbons from gallium arsenide by plasma immersion ion implantation and rapid thermal annealing

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