Structure-property relationships of benzo[2,1-b:3,4-b']bis[1]benzothiophenes for organic field effect transistors

Kai Zhang; Ji Zhang; Lanqi Huang; Xiaoqin Zhang; Gui Yu; Man Shing Wong

doi:10.1016/j.tetlet.2018.05.064

Structure-property relationships of benzo[2,1-b:3,4-b']bis[1]benzothiophenes for organic field effect transistors

Kai Zhang^*, Ji Zhang, Lanqi Huang, Xiaoqin Zhang, Gui Yu, Man Shing Wong

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › peer-review

3 Citations (Scopus)

Abstract

A series of novel benzo[2,1-b:3,4-b']bis[1]-benzothiophene (BBBT) derivatives with different side-chains were synthesized and characterized. And their mobility properties were evaluated based on their active layers in OFETs devices. By means of simple thermal annealing, the devices based on BBBT-4 and BBBT-6 exhibited typical p-type FETs behavior with average hole mobilities of 0.28 and 0.124 cm² V⁻¹ s⁻¹, respectively. Furthermore, the structure-property relationships of these semiconductors were also investigated by XRD and AFM.

Original language	English
Pages (from-to)	2717-2721
Number of pages	5
Journal	Tetrahedron Letters
Volume	59
Issue number	28
DOIs	https://doi.org/10.1016/j.tetlet.2018.05.064
Publication status	Published - 11 Jul 2018

Scopus Subject Areas

Biochemistry
Drug Discovery
Organic Chemistry

User-Defined Keywords

Benzobisbenzothiophene
Charge mobility
Morphology
Organic semiconductor

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10.1016/j.tetlet.2018.05.064

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@article{228450a8b34748b2a287a4c15e0eb523,

title = "Structure-property relationships of benzo[2,1-b:3,4-b']bis[1]benzothiophenes for organic field effect transistors",

abstract = "A series of novel benzo[2,1-b:3,4-b']bis[1]-benzothiophene (BBBT) derivatives with different side-chains were synthesized and characterized. And their mobility properties were evaluated based on their active layers in OFETs devices. By means of simple thermal annealing, the devices based on BBBT-4 and BBBT-6 exhibited typical p-type FETs behavior with average hole mobilities of 0.28 and 0.124 cm2 V−1 s−1, respectively. Furthermore, the structure-property relationships of these semiconductors were also investigated by XRD and AFM.",

keywords = "Benzobisbenzothiophene, Charge mobility, Morphology, Organic semiconductor",

author = "Kai Zhang and Ji Zhang and Lanqi Huang and Xiaoqin Zhang and Gui Yu and Wong, {Man Shing}",

note = "Funding Information: This research was financially supported by the Institute of Molecular Functional Materials, which was supported by a grant from the University Grants Committee , Areas of Excellence Scheme (AoE/P-03/08). Funding Information: This research was financially supported by the Institute of Molecular Functional Materials, which was supported by a grant from the University Grants Committee, Areas of Excellence Scheme (AoE/P-03/08).",

year = "2018",

month = jul,

day = "11",

doi = "10.1016/j.tetlet.2018.05.064",

language = "English",

volume = "59",

pages = "2717--2721",

journal = "Tetrahedron Letters",

issn = "0040-4039",

publisher = "Elsevier Ltd.",

number = "28",

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TY - JOUR

T1 - Structure-property relationships of benzo[2,1-b:3,4-b']bis[1]benzothiophenes for organic field effect transistors

AU - Zhang, Kai

AU - Zhang, Ji

AU - Huang, Lanqi

AU - Zhang, Xiaoqin

AU - Yu, Gui

AU - Wong, Man Shing

N1 - Funding Information: This research was financially supported by the Institute of Molecular Functional Materials, which was supported by a grant from the University Grants Committee , Areas of Excellence Scheme (AoE/P-03/08). Funding Information: This research was financially supported by the Institute of Molecular Functional Materials, which was supported by a grant from the University Grants Committee, Areas of Excellence Scheme (AoE/P-03/08).

PY - 2018/7/11

Y1 - 2018/7/11

N2 - A series of novel benzo[2,1-b:3,4-b']bis[1]-benzothiophene (BBBT) derivatives with different side-chains were synthesized and characterized. And their mobility properties were evaluated based on their active layers in OFETs devices. By means of simple thermal annealing, the devices based on BBBT-4 and BBBT-6 exhibited typical p-type FETs behavior with average hole mobilities of 0.28 and 0.124 cm2 V−1 s−1, respectively. Furthermore, the structure-property relationships of these semiconductors were also investigated by XRD and AFM.

AB - A series of novel benzo[2,1-b:3,4-b']bis[1]-benzothiophene (BBBT) derivatives with different side-chains were synthesized and characterized. And their mobility properties were evaluated based on their active layers in OFETs devices. By means of simple thermal annealing, the devices based on BBBT-4 and BBBT-6 exhibited typical p-type FETs behavior with average hole mobilities of 0.28 and 0.124 cm2 V−1 s−1, respectively. Furthermore, the structure-property relationships of these semiconductors were also investigated by XRD and AFM.

KW - Benzobisbenzothiophene

KW - Charge mobility

KW - Morphology

KW - Organic semiconductor

UR - http://www.scopus.com/inward/record.url?scp=85048543748&partnerID=8YFLogxK

U2 - 10.1016/j.tetlet.2018.05.064

DO - 10.1016/j.tetlet.2018.05.064

M3 - Journal article

AN - SCOPUS:85048543748

SN - 0040-4039

VL - 59

SP - 2717

EP - 2721

JO - Tetrahedron Letters

JF - Tetrahedron Letters

IS - 28

ER -

Structure-property relationships of benzo[2,1-b:3,4-b']bis[1]benzothiophenes for organic field effect transistors

Abstract

Scopus Subject Areas

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