Structure and electronic properties of SiO 2/Si multilayer superlattices: Si K edge and L 3,2 edge x-ray absorption fine structure study

R. Sammynaiken*, S. J. Naftel, T. K. Sham, Kok Wai CHEAH, B. Averboukh, R. Huber, Y. R. Shen, G. G. Qin, Z. C. Ma, W. H. Zong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

We report an x-ray absorption fine structure study at the Si K and L 3,2 edges of a series of Si/SiO 2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silicon oxide and capped by a 3 nm silicon oxide layer. These systems exhibit electroluminescence and photoluminescence. X-ray absorption near edge structure (XANES) at both the Si K and L 3,2 edge confirms that the Si layers are amorphous. Polarization dependent measurement at the Si K edge reveals that a distinct Si/SiO 2 interface exists with strong Si-O bonding oriented preferentially closer to the surface normal. High resolution XANES at the Si L 3,2 edge shows a noticeable blueshift of the edge threshold as the lattice spacing decreases, in good accord with quantum confinement. The results and their implications for the origin (quantum confinement and interface/oxide defects) of luminescence in these superlattice systems are discussed.

Original languageEnglish
Pages (from-to)3000-3006
Number of pages7
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
Publication statusPublished - 15 Sep 2002

Scopus Subject Areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Structure and electronic properties of SiO <sub>2</sub>/Si multilayer superlattices: Si K edge and L <sub>3,2</sub> edge x-ray absorption fine structure study'. Together they form a unique fingerprint.

Cite this