Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

Furong Zhu; Hajime Kohara; Takashi Fuyuki; Hiroyuki Matsunami

doi:10.1109/PVSC.1996.564228

Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

Furong Zhu^*
, Hajime Kohara
, Takashi Fuyuki
, Hiroyuki Matsunami

^*Corresponding author for this work

Department of Physics

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

1 Citation (Scopus)

Abstract

Polycrystalline silicon (Si) films have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films prepared at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C.

Original language	English
Title of host publication	Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996
Publisher	IEEE
Pages	709-712
Number of pages	4
ISBN (Print)	0780331664
DOIs	https://doi.org/10.1109/PVSC.1996.564228
Publication status	Published - 13 May 1996
Event	1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: 13 May 1996 → 17 May 1996

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	IEEE
ISSN (Print)	0160-8371

Conference

Conference	1996 25th IEEE Photovoltaic Specialists Conference
City	Washington, DC, USA
Period	13/05/96 → 17/05/96

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.1996.564228

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Zhu, F., Kohara, H., Fuyuki, T., & Matsunami, H. (1996). Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method. In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (pp. 709-712). (Conference Record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC.1996.564228

@inproceedings{8d2c58b9cd29440dbd6e016a957f60b5,

title = "Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method",

abstract = "Polycrystalline silicon (Si) films have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films prepared at different temperatures is investigated. Results reveal that over 90\% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C.",

author = "Furong Zhu and Hajime Kohara and Takashi Fuyuki and Hiroyuki Matsunami",

year = "1996",

month = may,

day = "13",

doi = "10.1109/PVSC.1996.564228",

language = "English",

isbn = "0780331664",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

pages = "709--712",

booktitle = "Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996",

address = "United States",

note = "1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

Zhu, F, Kohara, H, Fuyuki, T & Matsunami, H 1996, Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method. in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. Conference Record of the IEEE Photovoltaic Specialists Conference, IEEE, pp. 709-712, 1996 25th IEEE Photovoltaic Specialists Conference, Washington, DC, USA, 13/05/96. https://doi.org/10.1109/PVSC.1996.564228

Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method. / Zhu, Furong; Kohara, Hajime; Fuyuki, Takashi et al.
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. p. 709-712 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

TY - GEN

T1 - Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

AU - Zhu, Furong

AU - Kohara, Hajime

AU - Fuyuki, Takashi

AU - Matsunami, Hiroyuki

PY - 1996/5/13

Y1 - 1996/5/13

N2 - Polycrystalline silicon (Si) films have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films prepared at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C.

AB - Polycrystalline silicon (Si) films have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films prepared at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C.

UR - https://www.scopus.com/pages/publications/0030399929

U2 - 10.1109/PVSC.1996.564228

DO - 10.1109/PVSC.1996.564228

M3 - Conference proceeding

AN - SCOPUS:0030399929

SN - 0780331664

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 709

EP - 712

BT - Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

PB - IEEE

T2 - 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

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