Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

Z. H. Cen; T. P. Chen; L. Ding; Y. Liu; J. I. Wong; M. Yang; Z. Liu; W. P. Goh; Furong Zhu; S. Fung

doi:10.1063/1.3068002

Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

Z. H. Cen^*, T. P. Chen^*, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, Furong Zhu, S. Fung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

40 Citations (Scopus)

Abstract

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.

Original language	English
Article number	041102
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3068002
Publication status	Published - 26 Jan 2009

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10.1063/1.3068002

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@article{45d44328b53c4c7a943c5610e0c2c600,

title = "Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions",

abstract = "Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.",

author = "Cen, {Z. H.} and Chen, {T. P.} and L. Ding and Y. Liu and Wong, {J. I.} and M. Yang and Z. Liu and Goh, {W. P.} and Furong Zhu and S. Fung",

note = "Funding Information: This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01.",

year = "2009",

month = jan,

day = "26",

doi = "10.1063/1.3068002",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

AU - Cen, Z. H.

AU - Chen, T. P.

AU - Ding, L.

AU - Liu, Y.

AU - Wong, J. I.

AU - Yang, M.

AU - Liu, Z.

AU - Goh, W. P.

AU - Zhu, Furong

AU - Fung, S.

N1 - Funding Information: This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01.

PY - 2009/1/26

Y1 - 2009/1/26

N2 - Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.

AB - Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.

UR - http://www.scopus.com/inward/record.url?scp=59349084722&partnerID=8YFLogxK

U2 - 10.1063/1.3068002

DO - 10.1063/1.3068002

M3 - Journal article

AN - SCOPUS:59349084722

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041102

ER -

Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

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