Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

Z. H. Cen*, T. P. Chen*, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, Furong Zhu, S. Fung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.

Original languageEnglish
Article number041102
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 26 Jan 2009

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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