Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

L. Luo, X. X. Zhang, K. F. Li, Kok Wai CHEAH*, M. L. Gong, J. X. Shi, Rick W K WONG

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Erbium ions and ytterbium ions (1021 cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+ → Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped ErYb porous silicon has a promising potential for the application in optical communications.

Original languageEnglish
Article number212505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number21
DOIs
Publication statusPublished - 23 May 2005

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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