Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

L. Luo; X. X. Zhang; K. F. Li; K. W. Cheah; M. L. Gong; J. X. Shi; W. K. Wong

doi:10.1063/1.1925776

Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

L. Luo, X. X. Zhang, K. F. Li, K. W. Cheah^*, M. L. Gong, J. X. Shi, W. K. Wong

^*Corresponding author for this work

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Abstract

Erbium ions and ytterbium ions (1021 cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+ → Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped ErYb porous silicon has a promising potential for the application in optical communications.

Original language	English
Article number	212505
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1925776
Publication status	Published - 23 May 2005

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Physics and Astronomy (miscellaneous)

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@article{3705f6dde6e64738bfca962882357987,

title = "Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon",

abstract = "Erbium ions and ytterbium ions (1021 cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+ → Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped ErYb porous silicon has a promising potential for the application in optical communications.",

author = "L. Luo and Zhang, {X. X.} and Li, {K. F.} and Cheah, {K. W.} and Gong, {M. L.} and Shi, {J. X.} and Wong, {W. K.}",

note = "Funding Information: Two of the authors (L.L. and X.X.Z.) contributed equally to this work. The authors acknowledge the financial support from Hong Kong RGC Earmarked Grant (No. HKBU2154/03E) and the Natural Science Foundation of Guangdong Province (Nos. 031587, 980342, and 970163).",

year = "2005",

month = may,

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doi = "10.1063/1.1925776",

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journal = "Applied Physics Letters",

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AU - Luo, L.

AU - Zhang, X. X.

AU - Li, K. F.

AU - Cheah, K. W.

AU - Gong, M. L.

AU - Shi, J. X.

AU - Wong, W. K.

N1 - Funding Information: Two of the authors (L.L. and X.X.Z.) contributed equally to this work. The authors acknowledge the financial support from Hong Kong RGC Earmarked Grant (No. HKBU2154/03E) and the Natural Science Foundation of Guangdong Province (Nos. 031587, 980342, and 970163).

PY - 2005/5/23

Y1 - 2005/5/23

N2 - Erbium ions and ytterbium ions (1021 cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+ → Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped ErYb porous silicon has a promising potential for the application in optical communications.

AB - Erbium ions and ytterbium ions (1021 cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+ → Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped ErYb porous silicon has a promising potential for the application in optical communications.

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U2 - 10.1063/1.1925776

DO - 10.1063/1.1925776

M3 - Journal article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212505

ER -

Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

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