Strong electron field emission from Nano-CdS modified porous silicon

Ling Xu; Guan Qi Han; Jian Weng; Hoi Lam Tam; King Fai Li; Yu Zhang; Jun Xu; Zein Fan Hang; Kok Wai Cheah

doi:10.1088/0256-307X/21/10/051

Strong electron field emission from Nano-CdS modified porous silicon

Ling Xu^*
, Guan Qi Han
, Jian Weng
, Hoi Lam Tam
, King Fai Li
, Yu Zhang
, Jun Xu
, Zein Fan Hang
, Kok Wai Cheah

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

4 Citations (Scopus)

Abstract

A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm² at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

Original language	English
Pages (from-to)	2049-2050
Number of pages	2
Journal	Chinese Physics Letters
Volume	21
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/21/10/051
Publication status	Published - Oct 2004

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10.1088/0256-307X/21/10/051

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@article{9c992affc66e4280b2d60c800426f69c,

title = "Strong electron field emission from Nano-CdS modified porous silicon",

abstract = "A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.",

author = "Ling Xu and Han, \{Guan Qi\} and Jian Weng and Tam, \{Hoi Lam\} and Li, \{King Fai\} and Yu Zhang and Jun Xu and Hang, \{Zein Fan\} and Cheah, \{Kok Wai\}",

year = "2004",

month = oct,

doi = "10.1088/0256-307X/21/10/051",

language = "English",

volume = "21",

pages = "2049--2050",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

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TY - JOUR

T1 - Strong electron field emission from Nano-CdS modified porous silicon

AU - Xu, Ling

AU - Han, Guan Qi

AU - Weng, Jian

AU - Tam, Hoi Lam

AU - Li, King Fai

AU - Zhang, Yu

AU - Xu, Jun

AU - Hang, Zein Fan

AU - Cheah, Kok Wai

PY - 2004/10

Y1 - 2004/10

N2 - A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

AB - A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

UR - https://www.scopus.com/pages/publications/6344246001

U2 - 10.1088/0256-307X/21/10/051

DO - 10.1088/0256-307X/21/10/051

M3 - Journal article

AN - SCOPUS:6344246001

SN - 0256-307X

VL - 21

SP - 2049

EP - 2050

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

ER -

Strong electron field emission from Nano-CdS modified porous silicon

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