A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.
|Number of pages||2|
|Journal||Chinese Physics Letters|
|Publication status||Published - Oct 2004|
Scopus Subject Areas
- Physics and Astronomy(all)