Strong electron field emission from Nano-CdS modified porous silicon

Ling Xu*, Guan Qi Han, Jian Weng, Hoi Lam TAM, King Fai Li, Yu Zhang, Jun Xu, Zein Fan Hang, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

4 Citations (Scopus)


A nano-CdS modified porous silicon (nano-CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano-CdS/PS is about 4.0 V/m and the emission current reaches about 20 μA/cm2 at 5.0 V/μm. This emission current is 20 times larger than that of the PS substrate without nano-CdS modification. The strong field emission properties make the nano-CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)2049-2050
Number of pages2
JournalChinese Physics Letters
Issue number10
Publication statusPublished - Oct 2004

Scopus Subject Areas

  • Physics and Astronomy(all)


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