Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Linlin Shi, Keqiang Chen, Aiping Zhai*, Guohui Li, Mingming Fan, Yuying Hao, Fu Rong ZHU, Han Zhang, Yanxia Cui

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

Metal–inorganic semiconductor–metal photodetectors (MSM-PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM-PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third-generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM-PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM-PDs are discussed. Subsequently, the research progresses on MSM-PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM-PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM-PDs from the authors’ vision.

Original languageEnglish
Article number2000401
JournalLaser and Photonics Reviews
Volume15
Issue number1
DOIs
Publication statusPublished - Jan 2021

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

User-Defined Keywords

  • 2D materials
  • GaAs
  • metal–inorganic semiconductor–metal
  • perovskites
  • photodetectors
  • metal&#8211
  • inorganic semiconductor&#8211
  • metal

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