Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

Yanlian Lei, Ping Deng, Jun Li, Ming Lin, Fu Rong ZHU*, Tsz Wai Ng, Chun Sing Lee, Beng ONG

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

83 Citations (Scopus)
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Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V-1 s-1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements.

Original languageEnglish
Article number24476
JournalScientific Reports
Publication statusPublished - 19 Apr 2016

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