Abstract
There has been an increased interest in developing top emission organic light-emitting diodes (OLEDs) that are able to emit light from both sides of the OLED display. One important application of the top emission device structure is to achieve monolithic integration of a top-emitting OLED on a polycrystalline or amorphous silicon thin film transistors used in active matrix displays. A high performance dual-sided top-emitting polymer OLED developed in this work exhibited a total luminous efficiency of ∼5.0 cd/A at 4.0 V, which is comparable to that observed for a control device having bottom emission structure. A laser ablation technology was developed to define the pixels. The cathode separation was achieved without using the conventional reverse trapezoid type separators that are normally used for pixellated OLED displays. A prototype of semitransparent polymer light-emitting passive matrix display has a matrix of 100 ×32 with a display area of 32.25 mm by 11.15 mm.
Original language | English |
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Pages (from-to) | 913-918 |
Number of pages | 6 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 18 |
Issue number | 9 |
Early online date | 21 Dec 2006 |
DOIs | |
Publication status | Published - Sept 2007 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
User-Defined Keywords
- Laser Ablation Process
- Matrix Display
- Serial Peripheral Interface
- Passive Matrix
- OLED Display