Abstract
There has been an increased interest in developing top-emitting OLEDs that are able to emit light from both sides of the OLED display. One important application of the top emission device structure is to achieve monolithic integration of a top-emitting OLED on a polycrystalline or amorphous silicon thin film transistors used in active matrix displays. A high performance dual-sided top-emitting polymer OLED developed in this work exhibited a total luminous efficiency of -5.0 cd/A at 4.0 V, which is comparable to that observed for a control device having bottom emission structure. A laser ablation technology was developed to define the pixels. The cathode separation was achieved without using the conventional reverse trapezoid type separators that are normally used for pixellated OLED displays. A prototype of see-through polymer light-emitting passive matrix display has a matrix of 100×32 with a display area of 32.25 mm by 11.15 mm.
Original language | English |
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Pages | 711-714 |
Number of pages | 4 |
Publication status | Published - Dec 2005 |
Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 6 Dec 2005 → 9 Dec 2005 |
Conference
Conference | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
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Country/Territory | Japan |
City | Takamatsu |
Period | 6/12/05 → 9/12/05 |
Scopus Subject Areas
- Engineering(all)