Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

Ming Yang; T. P. Chen; Yang Liu; Liang Ding; Jen It Wong; Zhen Liu; Sam Zhang; Wali Zhang; Furong Zhu

doi:10.1109/TED.2008.2006531

Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

Ming Yang^*, T. P. Chen, Yang Liu, Liang Ding, Jen It Wong, Zhen Liu, Sam Zhang, Wali Zhang, Furong Zhu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

4 Citations (Scopus)

Abstract

In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.

Original language	English
Pages (from-to)	3605-3609
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	12
Early online date	21 Nov 2008
DOIs	https://doi.org/10.1109/TED.2008.2006531
Publication status	Published - Dec 2008

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

User-Defined Keywords

Aluminum nanocrystal
Aluminum nitride
Electroluminescence
Light emitting device

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10.1109/TED.2008.2006531

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@article{a1c0589086ee4e5d9eb1e387b922e2b3,

title = "Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals",

abstract = "In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.",

keywords = "Aluminum nanocrystal, Aluminum nitride, Electroluminescence, Light emitting device",

author = "Ming Yang and Chen, {T. P.} and Yang Liu and Liang Ding and Wong, {Jen It} and Zhen Liu and Sam Zhang and Wali Zhang and Furong Zhu",

note = "Funding Information: Manuscript received June 4, 2008; revised September 5, 2008. Current version published November 26, 2008. This work was supported in part by the Academic Research Fund from the Ministry of Education Singapore under Project ARC 1/04, in part by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01, and in part by the National Natural Science Foundation of China under project 60806040. The review of this brief was arranged by Editor L. Lunardi.",

year = "2008",

month = dec,

doi = "10.1109/TED.2008.2006531",

language = "English",

volume = "55",

pages = "3605--3609",

journal = "IEEE Transactions on Electron Devices",

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publisher = "IEEE",

number = "12",

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TY - JOUR

T1 - Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

AU - Yang, Ming

AU - Chen, T. P.

AU - Liu, Yang

AU - Ding, Liang

AU - Wong, Jen It

AU - Liu, Zhen

AU - Zhang, Sam

AU - Zhang, Wali

AU - Zhu, Furong

N1 - Funding Information: Manuscript received June 4, 2008; revised September 5, 2008. Current version published November 26, 2008. This work was supported in part by the Academic Research Fund from the Ministry of Education Singapore under Project ARC 1/04, in part by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01, and in part by the National Natural Science Foundation of China under project 60806040. The review of this brief was arranged by Editor L. Lunardi.

PY - 2008/12

Y1 - 2008/12

N2 - In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.

AB - In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.

KW - Aluminum nanocrystal

KW - Aluminum nitride

KW - Electroluminescence

KW - Light emitting device

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U2 - 10.1109/TED.2008.2006531

DO - 10.1109/TED.2008.2006531

M3 - Journal article

AN - SCOPUS:57149143731

SN - 0018-9383

VL - 55

SP - 3605

EP - 3609

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

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