Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

Xiaojuan Ye; Haian Song; Wei Zhong; Xiaosi Qi; Meihua Xu; Changqing Jin; Zaixin Yang; Chaktong Au; Youwei Du

doi:10.1007/s11431-010-0038-7

Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

Xiaojuan Ye, Haian Song, Wei Zhong^*, Xiaosi Qi, Meihua Xu, Changqing Jin, Zaixin Yang, Chaktong Au, Youwei Du

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › peer-review

7 Citations (Scopus)

Abstract

Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Science China Technological Sciences
Volume	53
Issue number	2
DOIs	https://doi.org/10.1007/s11431-010-0038-7
Publication status	Published - Feb 2010

User-Defined Keywords

Chemical synthesis
Electronic states (localized)
Semiconductors
Thin films

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10.1007/s11431-010-0038-7

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title = "Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films",

abstract = "Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.",

keywords = "Chemical synthesis, Electronic states (localized), Semiconductors, Thin films",

author = "Xiaojuan Ye and Haian Song and Wei Zhong and Xiaosi Qi and Meihua Xu and Changqing Jin and Zaixin Yang and Chaktong Au and Youwei Du",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 10674059) and the National Basic Research Program of China (“973” Project) (Grant No. 2005CB623605).",

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T1 - Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

AU - Ye, Xiaojuan

AU - Song, Haian

AU - Zhong, Wei

AU - Qi, Xiaosi

AU - Xu, Meihua

AU - Jin, Changqing

AU - Yang, Zaixin

AU - Au, Chaktong

AU - Du, Youwei

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 10674059) and the National Basic Research Program of China (“973” Project) (Grant No. 2005CB623605).

PY - 2010/2

Y1 - 2010/2

N2 - Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

AB - Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

KW - Chemical synthesis

KW - Electronic states (localized)

KW - Semiconductors

KW - Thin films

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M3 - Journal article

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EP - 296

JO - Science China Technological Sciences

JF - Science China Technological Sciences

IS - 2

ER -

Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

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