Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

Xiaojuan Ye, Haian Song, Wei Zhong*, Xiaosi Qi, Meihua Xu, Changqing Jin, Zaixin Yang, Chak Tong AU, Youwei Du

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

7 Citations (Scopus)


Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalScience China Technological Sciences
Issue number2
Publication statusPublished - Feb 2010

Scopus Subject Areas

  • Materials Science(all)
  • Engineering(all)

User-Defined Keywords

  • Chemical synthesis
  • Electronic states (localized)
  • Semiconductors
  • Thin films


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