Room-temperature electroluminescence from H-plasma-implanted silicon

Weili Liu*, Sunny C.H. Kwok, Ricky K.Y. Fu, Paul K. Chu, T. F. Hung, Zhengkui Xu, Chenglu Lin, K. F. Li, Hoi Lam TAM, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

5 Citations (Scopus)

Abstract

We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600°C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.

Original languageEnglish
Pages (from-to)L55-L58
JournalSemiconductor Science and Technology
Volume18
Issue number12
DOIs
Publication statusPublished - Dec 2003

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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