Room-temperature electroluminescence from H-plasma-implanted silicon

Weili Liu; Sunny C.H. Kwok; Ricky K.Y. Fu; Paul K. Chu; T. F. Hung; Zhengkui Xu; Chenglu Lin; K. F. Li; Hoi Lam TAM; Kok Wai CHEAH

doi:10.1088/0268-1242/18/12/102

Room-temperature electroluminescence from H-plasma-implanted silicon

Weili Liu^*, Sunny C.H. Kwok, Ricky K.Y. Fu, Paul K. Chu, T. F. Hung, Zhengkui Xu, Chenglu Lin, K. F. Li, Hoi Lam TAM, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Letter › peer-review

5 Citations (Scopus)

Abstract

We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600°C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.

Original language	English
Pages (from-to)	L55-L58
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	18
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/18/12/102
Publication status	Published - Dec 2003

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{5d362d3e98ef449c95279ab5a2205963,

title = "Room-temperature electroluminescence from H-plasma-implanted silicon",

abstract = "We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600°C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.",

author = "Weili Liu and Kwok, {Sunny C.H.} and Fu, {Ricky K.Y.} and Chu, {Paul K.} and Hung, {T. F.} and Zhengkui Xu and Chenglu Lin and Li, {K. F.} and TAM, {Hoi Lam} and CHEAH, {Kok Wai}",

year = "2003",

month = dec,

doi = "10.1088/0268-1242/18/12/102",

language = "English",

volume = "18",

pages = "L55--L58",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "12",

}

TY - JOUR

T1 - Room-temperature electroluminescence from H-plasma-implanted silicon

AU - Liu, Weili

AU - Kwok, Sunny C.H.

AU - Fu, Ricky K.Y.

AU - Chu, Paul K.

AU - Hung, T. F.

AU - Xu, Zhengkui

AU - Lin, Chenglu

AU - Li, K. F.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

PY - 2003/12

Y1 - 2003/12

N2 - We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600°C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.

AB - We have investigated the electroluminescence (EL) characteristics of hydrogen-plasma-immersion ion-implanted silicon. For the first time, white light was obtained at room temperature from the samples annealing at a temperature of more than 600°C. We have investigated the current-voltage curves of the device and the relationship between the EL intensity and current density. We analysed the distribution of hydrogen and the microstructure of samples using secondary ion mass spectrometry and transmission electron microscopy. Experimental results show that hydrogen-related complexes and nanocavities in the amorphous layer are not the causes of the emission. The flat cavities with silicon oxide at the surface may be the key to the EL.

UR - http://www.scopus.com/inward/record.url?scp=0346991438&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/18/12/102

DO - 10.1088/0268-1242/18/12/102

M3 - Letter

AN - SCOPUS:0346991438

SN - 0268-1242

VL - 18

SP - L55-L58

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -

Room-temperature electroluminescence from H-plasma-implanted silicon

Abstract

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