Hole injection and transport in films (300-350 nm) of poly(3- hexylthiophene) (P3HT) were investigated by dark-injection space-charge-limited current (DI-SCLC) technique. For samples with a nominally hole-only configuration of anode/P3HT/Au, the DI current transients depart significantly from the theory, and the signals cannot be used for reliable carrier mobility extraction. The origin of the departure can be attributed to electron leakage from the Au cathode. We outline a means of suppressing electron leakage by inserting an interlayer between the P3HT and the cathode. This interlayer has dual functions of blocking and trapping electrons. Using this interlayer, we obtain well-defined DI-SCLC signals for reliable carrier mobility determination. With a suitable interlayer to suppress undesirable carrier injection and transport, DI-SCLC technique should find broad applications in the transport characterization of narrow gap photovoltaic polymers.
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
- Electron blocking
- Electron trapping