Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

C. H. Cheung, W. J. Song, Shu Kong SO*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air.

Original languageEnglish
Pages (from-to)89-94
Number of pages6
JournalOrganic Electronics
Volume11
Issue number1
DOIs
Publication statusPublished - Jan 2010

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Charge injection
  • Injection efficiency
  • Organic semiconductor
  • Transition metal oxides

Fingerprint

Dive into the research topics of 'Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact'. Together they form a unique fingerprint.

Cite this