Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

C. H. Cheung; W. J. Song; S. K. So

doi:10.1016/j.orgel.2009.10.003

Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

C. H. Cheung, W. J. Song, S. K. So^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

40 Citations (Scopus)

Abstract

Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air.

Original language	English
Pages (from-to)	89-94
Number of pages	6
Journal	Organic Electronics
Volume	11
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2009.10.003
Publication status	Published - Jan 2010

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

User-Defined Keywords

Charge injection
Injection efficiency
Organic semiconductor
Transition metal oxides

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10.1016/j.orgel.2009.10.003

Cite this

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title = "Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact",

abstract = "Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air.",

keywords = "Charge injection, Injection efficiency, Organic semiconductor, Transition metal oxides",

author = "Cheung, {C. H.} and Song, {W. J.} and So, {S. K.}",

note = "Funding Information: Support of this research by the Research Grant Council of Hong Kong and the Research Committee of Hong Kong Baptist University under Grant #HKBU211107E, #HKBU211209E and FRG/07-08/II-66 is gratefully acknowledged.",

year = "2010",

month = jan,

doi = "10.1016/j.orgel.2009.10.003",

language = "English",

volume = "11",

pages = "89--94",

journal = "Organic Electronics",

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publisher = "Elsevier BV",

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T1 - Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

AU - Cheung, C. H.

AU - Song, W. J.

AU - So, S. K.

N1 - Funding Information: Support of this research by the Research Grant Council of Hong Kong and the Research Committee of Hong Kong Baptist University under Grant #HKBU211107E, #HKBU211209E and FRG/07-08/II-66 is gratefully acknowledged.

PY - 2010/1

Y1 - 2010/1

N2 - Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air.

AB - Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′biphenyl)-4,4′diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air.

KW - Charge injection

KW - Injection efficiency

KW - Organic semiconductor

KW - Transition metal oxides

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U2 - 10.1016/j.orgel.2009.10.003

DO - 10.1016/j.orgel.2009.10.003

M3 - Journal article

AN - SCOPUS:72649086680

SN - 1566-1199

VL - 11

SP - 89

EP - 94

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

Abstract

Scopus Subject Areas

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