Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO2 thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Current transport
- Si LED
- Silicon nanocrystal