Relationship Between Current Transport and Electroluminescence in Si+-Implanted SiO2 Thin Films

Liang Ding; T. P. Chen; Ming Yang; Jen It Wong; Zhanhong Cen; Yang Liu; Furong Zhu; Ampere A. Tseng

doi:10.1109/TED.2009.2031017

Relationship Between Current Transport and Electroluminescence in Si⁺-Implanted SiO₂ Thin Films

Liang Ding, T. P. Chen^*, Ming Yang, Jen It Wong, Zhanhong Cen, Yang Liu, Furong Zhu, Ampere A. Tseng

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

10 Citations (Scopus)

Abstract

Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO₂ thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.

Original language	English
Pages (from-to)	2785-2791
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	11
DOIs	https://doi.org/10.1109/TED.2009.2031017
Publication status	Published - Nov 2009

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

User-Defined Keywords

Current transport
Electroluminescence
Photoluminescence
Si LED
Silicon nanocrystal

Access to Document

10.1109/TED.2009.2031017

Cite this

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title = "Relationship Between Current Transport and Electroluminescence in Si+-Implanted SiO2 Thin Films",

abstract = "Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO2 thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.",

keywords = "Current transport, Electroluminescence, Photoluminescence, Si LED, Silicon nanocrystal",

author = "Liang Ding and Chen, {T. P.} and Ming Yang and Wong, {Jen It} and Zhanhong Cen and Yang Liu and Furong Zhu and Tseng, {Ampere A.}",

note = "Funding Information: This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. Publisher copyright: {\textcopyright} 2009 IEEE",

year = "2009",

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doi = "10.1109/TED.2009.2031017",

language = "English",

volume = "56",

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T1 - Relationship Between Current Transport and Electroluminescence in Si+-Implanted SiO2 Thin Films

AU - Ding, Liang

AU - Chen, T. P.

AU - Yang, Ming

AU - Wong, Jen It

AU - Cen, Zhanhong

AU - Liu, Yang

AU - Zhu, Furong

AU - Tseng, Ampere A.

PY - 2009/11

Y1 - 2009/11

N2 - Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO2 thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.

AB - Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO2 thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.

KW - Current transport

KW - Electroluminescence

KW - Photoluminescence

KW - Si LED

KW - Silicon nanocrystal

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U2 - 10.1109/TED.2009.2031017

DO - 10.1109/TED.2009.2031017

M3 - Journal article

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VL - 56

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EP - 2791

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

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