TY - JOUR
T1 - Reducing the Excitonic Loss at Donor/Acceptor Heterojunction with Negligible Exciton Dissociation Driving Force
AU - Xue, Wenyue
AU - Zhang, Zhuoqiong
AU - So, Shu Kong
AU - Song, Yin
AU - Wei, Zhixiang
AU - Ma, Wei
AU - Yan, Han
N1 - Thanks for the support from the National Natural Science Foundation of China (21975198 and 51803162) and the 111 project 2.0 (BP2018008). The Open Fund of the State Key Laboratory of Luminescent Materials and Devices (2021-skllmd-12) supported this work. X-ray data were acquired at beamlines 7.3.3 at the Advanced Light Source, which is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract DE-AC02-05CH11231. The authors thank Dr. Eric Schaible and Dr. Chenhui Zhu at beamline 7.3.3 for assistance with data acquisition. Y.S. acknowledges support from the National Natural Science Foundation of China under Grant 62105030. Y.S. also acknowledges valuable experimental help from the Analysis & Testing Center, Beijing Institute of Technology, and Jiayu Wang and Prof. Yuxiang Weng at the Institute of Physics, Chinese Academy of Sciences.
Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
PY - 2022/8/22
Y1 - 2022/8/22
N2 - A breakthrough for non-fullerene acceptors (NFAs) is their efficient photocharge generation and low nonradiative voltage loss (ΔVnrad) in a condition of negligible energy offset (ΔGS1,CT) between the lowest singlet state (S1) and the relaxed charge transfer (CT) state. This inspires the idea of viewing the donor/acceptor (D/A) binary blend as a single component in organic solar cells (OSCs) and attracts tremendous studies on the D/A pairs with negligible ΔGS1,CT. Unfortunately, an arbitrarily chosen material combination usually results in severe photovoltaic performance loss. To solve this problem, we present a diffused heterojunction (DHJ) doping strategy at the D/A heterojunction with small ΔGS1,CT. The electronic doping alleviates the performance loss by accelerating the exciton dissociation rate and reducing the ΔVnrad. After examining the DHJ doping strategy in other six NFA material combinations, we are confident to point out that our work opens an avenue for pursuing intrinsic high OSC performance comparing with other single-component photovoltaic technologies.
AB - A breakthrough for non-fullerene acceptors (NFAs) is their efficient photocharge generation and low nonradiative voltage loss (ΔVnrad) in a condition of negligible energy offset (ΔGS1,CT) between the lowest singlet state (S1) and the relaxed charge transfer (CT) state. This inspires the idea of viewing the donor/acceptor (D/A) binary blend as a single component in organic solar cells (OSCs) and attracts tremendous studies on the D/A pairs with negligible ΔGS1,CT. Unfortunately, an arbitrarily chosen material combination usually results in severe photovoltaic performance loss. To solve this problem, we present a diffused heterojunction (DHJ) doping strategy at the D/A heterojunction with small ΔGS1,CT. The electronic doping alleviates the performance loss by accelerating the exciton dissociation rate and reducing the ΔVnrad. After examining the DHJ doping strategy in other six NFA material combinations, we are confident to point out that our work opens an avenue for pursuing intrinsic high OSC performance comparing with other single-component photovoltaic technologies.
KW - doped organic solar cell
KW - doping efficiency
KW - exciton dissociation
KW - molecular doping
KW - non-fullerene acceptor
KW - nonradiative recombination
UR - http://www.scopus.com/inward/record.url?scp=85135897938&partnerID=8YFLogxK
U2 - 10.1021/acsaem.2c01601
DO - 10.1021/acsaem.2c01601
M3 - Journal article
AN - SCOPUS:85135897938
SN - 2574-0962
VL - 5
SP - 9929
EP - 9937
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 8
ER -