Red InGaN-based light-emitting diodes with a novel europium (III) tetrabasic complex as mono-phosphor

N. J. Xiang, Louis M L LEUNG, Kong So Shu Kong So, Wang Jing Wang, Su Qiang Su, M. L. Gong*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

A novel europium (III) tetrabasic complex, Eu (TPBDTFA)2 (TPATFA) Phen, was designed and synthesized. Photoluminescence measurements show that the complex exhibits strongly red emission due to the 5D0-7FJ transitions of Eu3+ ions with appropriate CIE (Commission Internationale de l'Eclairage, International Commission on Illumination) chromaticity coordinates (x = 0.64, y = 0.35) under 230-470 nm light excitation. The luminescence quantum yield for the Eu3+ complex is 0.126. Thermogravimetric analysis (TGA) confirms highly thermal stability of the complex with a decomposition temperature of 383.4 °C. All the characteristics indicate that the Eu3+ complex is highly efficiently red phosphor suitable to be excited by near UV-violet light. An intense red-emitting LED was fabricated by combining the mono-phosphor Eu (TPBDTFA)2 (TPATFA) Phen with a ∼395 nm emitting InGaN chip.

Original languageEnglish
Pages (from-to)2909-2913
Number of pages5
JournalMaterials Letters
Volume60
Issue number23
DOIs
Publication statusPublished - Oct 2006

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

User-Defined Keywords

  • Europium complex
  • InGaN LED
  • Luminescence
  • Phosphors

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