Rare earth doped porous silicon prepared by electro-chemical method

W. H. Zheng*, M. L. Gong, D. L. Lian, Rick W K WONG, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


We have carried out an investigation of the electro-chemical doping (ECD) of porous silicon (PS) with rare earth elements, especially Er was chosen for the main doping element in our work. Under certain conditions, after doping a blue shift was shown in the visible range photoluminescence (PL), and enhancement of PL intensity was observed. We address this that the impurity states in forbidden gap increase the optical probability of trapping carriers and the optical transition probability. Moreover, in the Infrared (IR) range, luminescence is observed around 1.54 μm at room temperature and is assigned to the optical transitions from intra-4f energy levels of Er3+. X-ray Photo-electronic Spectroscopy (XPS) showed that at least 3 atomic percent of the rare earth element has been incorporated into porous silicon layer. In conclusion, by choosing suitable electrolyte, we successfully doped rare earth elements into porous silicon by electro-chemical method.

Original languageEnglish
Pages (from-to)251-256
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 31 Mar 19973 Apr 1997

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Rare earth doped porous silicon prepared by electro-chemical method'. Together they form a unique fingerprint.

Cite this