TY - JOUR
T1 - Rare earth doped porous silicon prepared by electro-chemical method
AU - Zheng, W. H.
AU - Gong, M. L.
AU - Lian, D. L.
AU - WONG, Rick W K
AU - CHEAH, Kok Wai
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - We have carried out an investigation of the electro-chemical doping (ECD) of porous silicon (PS) with rare earth elements, especially Er was chosen for the main doping element in our work. Under certain conditions, after doping a blue shift was shown in the visible range photoluminescence (PL), and enhancement of PL intensity was observed. We address this that the impurity states in forbidden gap increase the optical probability of trapping carriers and the optical transition probability. Moreover, in the Infrared (IR) range, luminescence is observed around 1.54 μm at room temperature and is assigned to the optical transitions from intra-4f energy levels of Er3+. X-ray Photo-electronic Spectroscopy (XPS) showed that at least 3 atomic percent of the rare earth element has been incorporated into porous silicon layer. In conclusion, by choosing suitable electrolyte, we successfully doped rare earth elements into porous silicon by electro-chemical method.
AB - We have carried out an investigation of the electro-chemical doping (ECD) of porous silicon (PS) with rare earth elements, especially Er was chosen for the main doping element in our work. Under certain conditions, after doping a blue shift was shown in the visible range photoluminescence (PL), and enhancement of PL intensity was observed. We address this that the impurity states in forbidden gap increase the optical probability of trapping carriers and the optical transition probability. Moreover, in the Infrared (IR) range, luminescence is observed around 1.54 μm at room temperature and is assigned to the optical transitions from intra-4f energy levels of Er3+. X-ray Photo-electronic Spectroscopy (XPS) showed that at least 3 atomic percent of the rare earth element has been incorporated into porous silicon layer. In conclusion, by choosing suitable electrolyte, we successfully doped rare earth elements into porous silicon by electro-chemical method.
UR - http://www.scopus.com/inward/record.url?scp=0030699880&partnerID=8YFLogxK
U2 - 10.1557/proc-471-251
DO - 10.1557/proc-471-251
M3 - Conference article
AN - SCOPUS:0030699880
SN - 0272-9172
VL - 471
SP - 251
EP - 256
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - Proceedings of the 1997 MRS Spring Meeting
Y2 - 31 March 1997 through 3 April 1997
ER -