Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off

Engineering & Materials Science

• Photoluminescence spectroscopy 100%
• Gallium nitride 65%
• Raman spectroscopy 63%
• Neodymium lasers 63%
• Sapphire 63%
• Substrates 33%
• Lasers 18%
• Photoluminescence 9%
• Pulsed lasers 8%
• Silicon wafers 7%
• Photons 7%
• Energy gap 6%
• Phase transitions 6%
• Thin films 5%
• Heating 4%
• Cooling 4%
• Temperature 2%
• Experiments 2%

Physics & Astronomy

• gallium nitrides 55%
• YAG lasers 42%
• Raman spectroscopy 40%
• sapphire 40%
• photoluminescence 33%
• spectroscopy 24%
• lasers 10%
• phase transformations 5%
• pulsed lasers 5%
• wafers 4%
• harmonics 4%
• cooling 4%
• cycles 3%
• heating 3%
• photons 3%
• silicon 3%
• thin films 3%
• energy 1%

Chemical Compounds

• Photoluminescence Spectroscopy 51%
• Nitride 46%
• Raman Spectroscopy 36%
• Cubic Space Group 9%
• Hexagonal Space Group 9%
• Nonequilibrium 6%
• Photon 5%
• Energy 5%
• Cooling 5%
• Photoluminescence 4%
• Band Gap 4%