Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off

H. P. Ho*, K. C. Lo, G. G. Siu, C. Surya, K. F. Li, K. W. Cheah

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

21 Citations (Scopus)

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Physics

Engineering

Material Science