Abstract
We study theoretically the properties of a thin film of a semiconductor embedded in the interface of two kinds of single-negative materials. At some frequencies the structure with suitable size is equivalent to an effective (near) zero-index medium. The coupling of exciton resonance in the semiconductor and the interface mode in a zero-index medium leads to Rabi splitting. Compared with Rabi splitting observed in cavities, the splitting modes in zero-index media are robust against the scaling change of the length and direction of incident wave.
| Original language | English |
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| Pages (from-to) | 1980-1982 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 32 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 15 Jul 2007 |