Rabi splitting with excitons in effective (near) zero-index media

We study theoretically the properties of a thin film of a semiconductor embedded in the interface of two kinds of single-negative materials. At some frequencies the structure with suitable size is equivalent to an effective (near) zero-index medium. The coupling of exciton resonance in the semiconductor and the interface mode in a zero-index medium leads to Rabi splitting. Compared with Rabi splitting observed in cavities, the splitting modes in zero-index media are robust against the scaling change of the length and direction of incident wave.