Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

Zhan Hong Cen*, T. P. Chen, Liang Ding, Yang Liu, Zhen Liu, Ming Yang, Jen It Wong, W. P. Goh, Fu Rong ZHU, S. Fung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.

Original languageEnglish
Article number5291779
Pages (from-to)3212-3217
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume56
Issue number12
DOIs
Publication statusPublished - Dec 2009

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Charge trapping
  • Electroluminescence quenching
  • Reactivation
  • Si-implanted silicon nitride

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