Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

Zhan Hong Cen; T. P. Chen; Liang Ding; Yang Liu; Zhen Liu; Ming Yang; Jen It Wong; W. P. Goh; Fu Rong ZHU; S. Fung

doi:10.1109/TED.2009.2033009

Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

Zhan Hong Cen^*, T. P. Chen, Liang Ding, Yang Liu, Zhen Liu, Ming Yang, Jen It Wong, W. P. Goh, Fu Rong ZHU, S. Fung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

7 Citations (Scopus)

Abstract

In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.

Original language	English
Article number	5291779
Pages (from-to)	3212-3217
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	12
DOIs	https://doi.org/10.1109/TED.2009.2033009
Publication status	Published - Dec 2009

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

User-Defined Keywords

Charge trapping
Electroluminescence quenching
Reactivation
Si-implanted silicon nitride

Access to Document

10.1109/TED.2009.2033009

Cite this

@article{edf3fffb66d04b1d89549929a34cbbf0,

title = "Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film",

abstract = "In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.",

keywords = "Charge trapping, Electroluminescence quenching, Reactivation, Si-implanted silicon nitride",

author = "Cen, {Zhan Hong} and Chen, {T. P.} and Liang Ding and Yang Liu and Zhen Liu and Ming Yang and Wong, {Jen It} and Goh, {W. P.} and ZHU, {Fu Rong} and S. Fung",

note = "Funding Information: Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi.",

year = "2009",

month = dec,

doi = "10.1109/TED.2009.2033009",

language = "English",

volume = "56",

pages = "3212--3217",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "12",

}

TY - JOUR

T1 - Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

AU - Cen, Zhan Hong

AU - Chen, T. P.

AU - Ding, Liang

AU - Liu, Yang

AU - Liu, Zhen

AU - Yang, Ming

AU - Wong, Jen It

AU - Goh, W. P.

AU - ZHU, Fu Rong

AU - Fung, S.

N1 - Funding Information: Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi.

PY - 2009/12

Y1 - 2009/12

N2 - In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.

AB - In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.

KW - Charge trapping

KW - Electroluminescence quenching

KW - Reactivation

KW - Si-implanted silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=79959198293&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2033009

DO - 10.1109/TED.2009.2033009

M3 - Journal article

AN - SCOPUS:79959198293

SN - 0018-9383

VL - 56

SP - 3212

EP - 3217

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 5291779

ER -

Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

Abstract

Scopus Subject Areas

User-Defined Keywords

Access to Document

Other files and links

Fingerprint

Cite this