Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin-Film Transistor Configuration

Wai Yu Sit, Sin Hang CHEUNG, Cyrus Yiu Him Chan, Ka Kin Tsung, Sai Wing Tsang, Shu Kong SO*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Thin film transistors (TFTs) can be used to determine the bulk-like mobilities of amorphous semiconductors. Different amine-based organic hole transporting materials (HTs) used in organic light-emitting diodes have been investigated. In addition, the present study also measures the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials are grown separately on SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1–2 orders smaller than the bulk values obtained by time-of-flight (TOF) technique. On PS gate dielectric layer, the TFT mobilities are in good agreement TOF data. Only 10 nm of organic semiconductor is sufficient for TFTs to achieve TOF mobilities. Using the Gaussian disorder model, it is found that on SiO2 surface, when compared to the bulk values, the energetic disorders (s) of the HTs increase and simultaneously, the high temperature limits (µ) of the carrier mobilities decrease. Both s and µ contribute to the reduction of the carrier mobility. The increase in s is related to the presence of randomly oriented polar Si-O bonds. The reduction of µ on SiO2 is related to the orientations of the more planar molecules which tend to lie horizontally on the surface.

Original languageEnglish
Article number1500273
JournalAdvanced Electronic Materials
Volume2
Issue number3
DOIs
Publication statusPublished - Mar 2016

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials

User-Defined Keywords

  • charge transport
  • molecular orientation
  • organic light emitting diodes
  • organic thin-film transistors
  • time of flight

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