Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

H. Wang; H. P. Ho; K. C. Lo; K. W. Cheah

doi:10.1016/j.matchemphys.2007.07.012

Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

H. Wang, H. P. Ho^*, K. C. Lo, K. W. Cheah

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

18 Citations (Scopus)

Abstract

We investigate the p-type doping in ZnO prepared by metal-organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 10¹⁸ cm^-3 and hole mobility of about 4.29 cm² V^-1 s^-1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I-V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.

Original language	English
Pages (from-to)	244-247
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	107
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2007.07.012
Publication status	Published - 15 Feb 2008

Scopus Subject Areas

General Materials Science
Condensed Matter Physics

User-Defined Keywords

Doping
Metalorganic vapor phase epitaxy
Oxides
p-n homojunctions
p-Type conduction
Semiconducting II-VI materials

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10.1016/j.matchemphys.2007.07.012

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title = "Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE",

abstract = "We investigate the p-type doping in ZnO prepared by metal-organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 1018 cm-3 and hole mobility of about 4.29 cm2 V-1 s-1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I-V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.",

keywords = "Doping, Metalorganic vapor phase epitaxy, Oxides, p-n homojunctions, p-Type conduction, Semiconducting II-VI materials",

author = "H. Wang and Ho, {H. P.} and Lo, {K. C.} and Cheah, {K. W.}",

note = "Funding Information: This work was partially supported by Hong Kong Research Grant Council (RGC) under Project No. CUHK412105. We would like to thank Mr. H.L. Tam for his help with PL measurement. Technical assistance from Dr. W.Y. Cheung, Dr. N. Ke, and Mr. W.K. Chan are also acknowledged.",

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doi = "10.1016/j.matchemphys.2007.07.012",

language = "English",

volume = "107",

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journal = "Materials Chemistry and Physics",

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T1 - Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

AU - Wang, H.

AU - Ho, H. P.

AU - Lo, K. C.

AU - Cheah, K. W.

N1 - Funding Information: This work was partially supported by Hong Kong Research Grant Council (RGC) under Project No. CUHK412105. We would like to thank Mr. H.L. Tam for his help with PL measurement. Technical assistance from Dr. W.Y. Cheung, Dr. N. Ke, and Mr. W.K. Chan are also acknowledged.

PY - 2008/2/15

Y1 - 2008/2/15

N2 - We investigate the p-type doping in ZnO prepared by metal-organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 1018 cm-3 and hole mobility of about 4.29 cm2 V-1 s-1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I-V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.

AB - We investigate the p-type doping in ZnO prepared by metal-organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 1018 cm-3 and hole mobility of about 4.29 cm2 V-1 s-1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I-V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.

KW - Doping

KW - Metalorganic vapor phase epitaxy

KW - Oxides

KW - p-n homojunctions

KW - p-Type conduction

KW - Semiconducting II-VI materials

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U2 - 10.1016/j.matchemphys.2007.07.012

DO - 10.1016/j.matchemphys.2007.07.012

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AN - SCOPUS:36849056999

SN - 0254-0584

VL - 107

SP - 244

EP - 247

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

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