Preparation of p-type ZnO films with (N,Ga) co-doping by MOVPE

H. Wang, H. P. Ho*, K. C. Lo, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We investigate the p-type doping in ZnO prepared by metal-organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 1018 cm-3 and hole mobility of about 4.29 cm2 V-1 s-1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I-V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.

Original languageEnglish
Pages (from-to)244-247
Number of pages4
JournalMaterials Chemistry and Physics
Volume107
Issue number2-3
DOIs
Publication statusPublished - 15 Feb 2008

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics

User-Defined Keywords

  • Doping
  • Metalorganic vapor phase epitaxy
  • Oxides
  • p-n homojunctions
  • p-Type conduction
  • Semiconducting II-VI materials

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