Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs

K. C. Lo; H. P. Ho; K. Y. Fu; P. K. Chu; K. F. Li; K. W. Cheah

doi:10.1063/1.1715137

Preparation of GaN thin film and Ga₂O₃ nanoribbons by plasma immersion ion implantation of N into GaAs

K. C. Lo^*, H. P. Ho, K. Y. Fu, P. K. Chu, K. F. Li, K. W. Cheah

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

16 Citations (Scopus)

Abstract

The study of the synthesis of GaN films and Ga₂O₃ nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga₂O₃ nanoribbons were found on the sample surface. It was found that the GA₂O₃ ribbons were of high crystal quality.

Original language	English
Pages (from-to)	8178-8184
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.1715137
Publication status	Published - 15 Jun 2004

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Physics and Astronomy(all)

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title = "Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs",

abstract = "The study of the synthesis of GaN films and Ga2O3 nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga2O3 nanoribbons were found on the sample surface. It was found that the GA2O3 ribbons were of high crystal quality.",

author = "Lo, {K. C.} and Ho, {H. P.} and Fu, {K. Y.} and Chu, {P. K.} and Li, {K. F.} and Cheah, {K. W.}",

note = "The authors wish to thank The Chinese University of Hong Kong for providing the research studentship support of K. C. Lo. Financial support from a research grant, Grant No. RGC CERG CityU 1052/02E, is also gratefully acknowledged. ",

year = "2004",

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doi = "10.1063/1.1715137",

language = "English",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs

AU - Lo, K. C.

AU - Ho, H. P.

AU - Fu, K. Y.

AU - Chu, P. K.

AU - Li, K. F.

AU - Cheah, K. W.

N1 - The authors wish to thank The Chinese University of Hong Kong for providing the research studentship support of K. C. Lo. Financial support from a research grant, Grant No. RGC CERG CityU 1052/02E, is also gratefully acknowledged.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - The study of the synthesis of GaN films and Ga2O3 nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga2O3 nanoribbons were found on the sample surface. It was found that the GA2O3 ribbons were of high crystal quality.

AB - The study of the synthesis of GaN films and Ga2O3 nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga2O3 nanoribbons were found on the sample surface. It was found that the GA2O3 ribbons were of high crystal quality.

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U2 - 10.1063/1.1715137

DO - 10.1063/1.1715137

M3 - Journal article

AN - SCOPUS:3142533259

SN - 0021-8979

VL - 95

SP - 8178

EP - 8184

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Preparation of GaN thin film and Ga₂O₃ nanoribbons by plasma immersion ion implantation of N into GaAs

Abstract

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