The study of the synthesis of GaN films and Ga2O3 nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga2O3 nanoribbons were found on the sample surface. It was found that the GA2O3 ribbons were of high crystal quality.
|Number of pages||7|
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Jun 2004|
Scopus Subject Areas
- Physics and Astronomy(all)