Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs

K. C. Lo*, H. P. Ho, K. Y. Fu, P. K. Chu, K. F. Li, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The study of the synthesis of GaN films and Ga2O3 nanoribbons by plasma immersion ion implantation (PIII) of nitrogen and postimplant rapid thermal annealing (RTA) was carried out. After annealing at 850°C, the presence of strained GaN was revealed by the Raman spectroscopy and x-ray diffraction studies. It was observed that after annealing at 950°C or above, Ga2O3 nanoribbons were found on the sample surface. It was found that the GA2O3 ribbons were of high crystal quality.

Original languageEnglish
Pages (from-to)8178-8184
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
Publication statusPublished - 15 Jun 2004

Scopus Subject Areas

  • Physics and Astronomy(all)

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