Porosity determination equation for porous silicon

De Liang Lian*, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Through the studying of the carriers moving of the porous silicon as well the definition of SBET, the equation of the relationship between porosity, current density and etching speed can be deduced. It is shown that there is a universal relationship for porous silicon made from p-type silicon, it is possible to determine the change in porosity with respect to etching under a set of etching current density. This relationship is certificated by experimental data from several reports on these etching parameters.

Original languageEnglish
Pages (from-to)817-820
Number of pages4
JournalChinese Journal of Semiconductors
Issue number7
Publication statusPublished - Jul 2001

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

User-Defined Keywords

  • Luminescence intensity
  • Porosity
  • Porous silicon


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