Abstract
Through the studying of the carriers moving of the porous silicon as well the definition of SBET, the equation of the relationship between porosity, current density and etching speed can be deduced. It is shown that there is a universal relationship for porous silicon made from p-type silicon, it is possible to determine the change in porosity with respect to etching under a set of etching current density. This relationship is certificated by experimental data from several reports on these etching parameters.
| Original language | English |
|---|---|
| Pages (from-to) | 817-820 |
| Number of pages | 4 |
| Journal | Chinese Journal of Semiconductors |
| Volume | 22 |
| Issue number | 7 |
| Publication status | Published - Jul 2001 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
User-Defined Keywords
- Luminescence intensity
- Porosity
- Porous silicon