Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells

Joseph Micallef*, James L. Borg, Wai Chee SHIU

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

Original languageEnglish
Pages (from-to)371-376
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume450
DOIs
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 4 Dec 19965 Dec 1996

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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