Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells

Joseph Micallef; James L. Borg; Wai Chee SHIU

doi:10.1557/PROC-450-371

Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells

Joseph Micallef^*, James L. Borg, Wai Chee SHIU

^*Corresponding author for this work

Department of Mathematics

Research output: Contribution to journal › Article › peer-review

Abstract

Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In_0.53Ga_0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

Original language	English
Pages (from-to)	371-376
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	450
DOIs	https://doi.org/10.1557/PROC-450-371
Publication status	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 4 Dec 1996 → 5 Dec 1996

Scopus Subject Areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{8f98a6dfd7c140fbba978f8ed259d2a5,

title = "Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells",

abstract = "Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.",

author = "Joseph Micallef and Borg, {James L.} and SHIU, {Wai Chee}",

year = "1997",

doi = "10.1557/PROC-450-371",

language = "English",

volume = "450",

pages = "371--376",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells

AU - Micallef, Joseph

AU - Borg, James L.

AU - SHIU, Wai Chee

PY - 1997

Y1 - 1997

N2 - Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

AB - Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

UR - http://www.scopus.com/inward/record.url?scp=0030644414&partnerID=8YFLogxK

U2 - 10.1557/PROC-450-371

DO - 10.1557/PROC-450-371

M3 - Article

AN - SCOPUS:0030644414

VL - 450

SP - 371

EP - 376

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 4 December 1996 through 5 December 1996

ER -

Polarization insensitivity in interdiffused, strained InGaAs/InP quantum wells

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