Abstract
Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.
Original language | English |
---|---|
Pages (from-to) | 371-376 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 450 |
DOIs | |
Publication status | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 4 Dec 1996 → 5 Dec 1996 |
Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering